Semiconductor device and forming method thereof

The invention provides a semiconductor device and a forming method thereof. Such a method includes forming a first capacitor in a first voltage domain and forming a second capacitor in the first voltage domain. The first capacitor is connected in parallel with the second capacitor. A third capacitor and a fourth capacitor are formed in the second voltage domain. The third capacitor is connected in series with the fourth capacitor. The first capacitor and the second capacitor are connected in parallel with a supply point of the first voltage domain and a reference point of the first voltage domain. The fourth capacitor is connected to a supply point of the second voltage domain. The third capacitor is connected to a reference point of the second voltage domain. 本揭露提供一种半导体装置及其形成方法。此种方法包括在第一电压域中形成第一电容器及在第一电压域中形成第二电容器。第一电容器与第二电容器并联连接。在第二电压域中形成第三电容器及第四电容器。第三电容器与第四电容器串联连接。第一电容器及第二电容器与第一电压域的供电点及第一电压域的参考点并联连接。第四电容器连接至第二电压域的供电点。第三电容器连接至第二电压域的参考点。