Semiconductor device and method

Manufacturing processes and devices are provided in which a first opening is formed within a substrate. The first opening is remodeled to a second opening using a second etching process. The second etching process is performed using free radical etching, where the free radical etching utilizes neutr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG ZHECHENG, WU BAIQI, YANG BAIFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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