Semiconductor device and method
Manufacturing processes and devices are provided in which a first opening is formed within a substrate. The first opening is remodeled to a second opening using a second etching process. The second etching process is performed using free radical etching, where the free radical etching utilizes neutr...
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| creator | ZHANG ZHECHENG WU BAIQI YANG BAIFENG |
| description | Manufacturing processes and devices are provided in which a first opening is formed within a substrate. The first opening is remodeled to a second opening using a second etching process. The second etching process is performed using free radical etching, where the free radical etching utilizes neutral ions. Thus, pushing of the substrate is reduced. The embodiment of the invention also relates to a semiconductor device and a manufacturing method thereof.
提供了制造工艺和器件，其中，在衬底内形成第一开口。使用第二蚀刻工艺将第一开口重塑为第二开口。利用自由基蚀刻实施第二蚀刻工艺，其中，自由基蚀刻利用中性离子。因此，减小衬底的推动。本发明的实施例还涉及半导体器件及其制造方法。 |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114664930A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114664930A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114664930A3</originalsourceid><addsrcrecordid>eNrjZJAPTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychP4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYmZmYmlsYGjsbEqAEALdEk7Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and method</title><source>esp@cenet</source><creator>ZHANG ZHECHENG ; WU BAIQI ; YANG BAIFENG</creator><creatorcontrib>ZHANG ZHECHENG ; WU BAIQI ; YANG BAIFENG</creatorcontrib><description>Manufacturing processes and devices are provided in which a first opening is formed within a substrate. The first opening is remodeled to a second opening using a second etching process. The second etching process is performed using free radical etching, where the free radical etching utilizes neutral ions. Thus, pushing of the substrate is reduced. The embodiment of the invention also relates to a semiconductor device and a manufacturing method thereof.
提供了制造工艺和器件，其中，在衬底内形成第一开口。使用第二蚀刻工艺将第一开口重塑为第二开口。利用自由基蚀刻实施第二蚀刻工艺，其中，自由基蚀刻利用中性离子。因此，减小衬底的推动。本发明的实施例还涉及半导体器件及其制造方法。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220624&DB=EPODOC&CC=CN&NR=114664930A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220624&DB=EPODOC&CC=CN&NR=114664930A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG ZHECHENG</creatorcontrib><creatorcontrib>WU BAIQI</creatorcontrib><creatorcontrib>YANG BAIFENG</creatorcontrib><title>Semiconductor device and method</title><description>Manufacturing processes and devices are provided in which a first opening is formed within a substrate. The first opening is remodeled to a second opening using a second etching process. The second etching process is performed using free radical etching, where the free radical etching utilizes neutral ions. Thus, pushing of the substrate is reduced. The embodiment of the invention also relates to a semiconductor device and a manufacturing method thereof.
提供了制造工艺和器件，其中，在衬底内形成第一开口。使用第二蚀刻工艺将第一开口重塑为第二开口。利用自由基蚀刻实施第二蚀刻工艺，其中，自由基蚀刻利用中性离子。因此，减小衬底的推动。本发明的实施例还涉及半导体器件及其制造方法。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAPTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychP4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYmZmYmlsYGjsbEqAEALdEk7Q</recordid><startdate>20220624</startdate><enddate>20220624</enddate><creator>ZHANG ZHECHENG</creator><creator>WU BAIQI</creator><creator>YANG BAIFENG</creator><scope>EVB</scope></search><sort><creationdate>20220624</creationdate><title>Semiconductor device and method</title><author>ZHANG ZHECHENG ; WU BAIQI ; YANG BAIFENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114664930A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG ZHECHENG</creatorcontrib><creatorcontrib>WU BAIQI</creatorcontrib><creatorcontrib>YANG BAIFENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG ZHECHENG</au><au>WU BAIQI</au><au>YANG BAIFENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method</title><date>2022-06-24</date><risdate>2022</risdate><abstract>Manufacturing processes and devices are provided in which a first opening is formed within a substrate. The first opening is remodeled to a second opening using a second etching process. The second etching process is performed using free radical etching, where the free radical etching utilizes neutral ions. Thus, pushing of the substrate is reduced. The embodiment of the invention also relates to a semiconductor device and a manufacturing method thereof.
提供了制造工艺和器件，其中，在衬底内形成第一开口。使用第二蚀刻工艺将第一开口重塑为第二开口。利用自由基蚀刻实施第二蚀刻工艺，其中，自由基蚀刻利用中性离子。因此，减小衬底的推动。本发明的实施例还涉及半导体器件及其制造方法。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device and method |
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