MEMORY DEVICE AND OPERATING METHOD THEREOF

An operating method of a memory device includes: monitoring a temperature of a non-volatile memory device including a plurality of memory blocks; receiving a first request from a host; in response to the first request: when a first memory block corresponding to the first request is exposed to a thre...

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Hauptverfasser: LEE KYUNG-DUK, KIM YOO-HWAN
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creator LEE KYUNG-DUK
KIM YOO-HWAN
description An operating method of a memory device includes: monitoring a temperature of a non-volatile memory device including a plurality of memory blocks; receiving a first request from a host; in response to the first request: when a first memory block corresponding to the first request is exposed to a threshold temperature or a temperature higher than the threshold temperature for a first period of time equal to or greater than a threshold period of time, a first command is transmitted to the non-volatile memory device, and when the first memory block is exposed to a temperature lower than the threshold temperature for the threshold period of time, a second command is transmitted to the non-volatile memory device. Transmitting a second command to the non-volatile memory device; charging a word line of the first memory block with a driving voltage in response to the first command; and executing a first operation corresponding to the first request in response to the first command or the second command. 一种存储设备的操作方法包括:监
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114649026A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114649026A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114649026A3</originalsourceid><addsrcrecordid>eNrjZNDydfX1D4pUcHEN83R2VXD0c1HwD3ANcgzx9HNX8HUN8fB3UQjxcA1y9XfjYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhiZmJpYGRmaOxsSoAQBDoiSG</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MEMORY DEVICE AND OPERATING METHOD THEREOF</title><source>esp@cenet</source><creator>LEE KYUNG-DUK ; KIM YOO-HWAN</creator><creatorcontrib>LEE KYUNG-DUK ; KIM YOO-HWAN</creatorcontrib><description>An operating method of a memory device includes: monitoring a temperature of a non-volatile memory device including a plurality of memory blocks; receiving a first request from a host; in response to the first request: when a first memory block corresponding to the first request is exposed to a threshold temperature or a temperature higher than the threshold temperature for a first period of time equal to or greater than a threshold period of time, a first command is transmitted to the non-volatile memory device, and when the first memory block is exposed to a temperature lower than the threshold temperature for the threshold period of time, a second command is transmitted to the non-volatile memory device. Transmitting a second command to the non-volatile memory device; charging a word line of the first memory block with a driving voltage in response to the first command; and executing a first operation corresponding to the first request in response to the first command or the second command. 一种存储设备的操作方法包括:监</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220621&amp;DB=EPODOC&amp;CC=CN&amp;NR=114649026A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220621&amp;DB=EPODOC&amp;CC=CN&amp;NR=114649026A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE KYUNG-DUK</creatorcontrib><creatorcontrib>KIM YOO-HWAN</creatorcontrib><title>MEMORY DEVICE AND OPERATING METHOD THEREOF</title><description>An operating method of a memory device includes: monitoring a temperature of a non-volatile memory device including a plurality of memory blocks; receiving a first request from a host; in response to the first request: when a first memory block corresponding to the first request is exposed to a threshold temperature or a temperature higher than the threshold temperature for a first period of time equal to or greater than a threshold period of time, a first command is transmitted to the non-volatile memory device, and when the first memory block is exposed to a temperature lower than the threshold temperature for the threshold period of time, a second command is transmitted to the non-volatile memory device. Transmitting a second command to the non-volatile memory device; charging a word line of the first memory block with a driving voltage in response to the first command; and executing a first operation corresponding to the first request in response to the first command or the second command. 一种存储设备的操作方法包括:监</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDydfX1D4pUcHEN83R2VXD0c1HwD3ANcgzx9HNX8HUN8fB3UQjxcA1y9XfjYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhiZmJpYGRmaOxsSoAQBDoiSG</recordid><startdate>20220621</startdate><enddate>20220621</enddate><creator>LEE KYUNG-DUK</creator><creator>KIM YOO-HWAN</creator><scope>EVB</scope></search><sort><creationdate>20220621</creationdate><title>MEMORY DEVICE AND OPERATING METHOD THEREOF</title><author>LEE KYUNG-DUK ; KIM YOO-HWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114649026A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE KYUNG-DUK</creatorcontrib><creatorcontrib>KIM YOO-HWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE KYUNG-DUK</au><au>KIM YOO-HWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEMORY DEVICE AND OPERATING METHOD THEREOF</title><date>2022-06-21</date><risdate>2022</risdate><abstract>An operating method of a memory device includes: monitoring a temperature of a non-volatile memory device including a plurality of memory blocks; receiving a first request from a host; in response to the first request: when a first memory block corresponding to the first request is exposed to a threshold temperature or a temperature higher than the threshold temperature for a first period of time equal to or greater than a threshold period of time, a first command is transmitted to the non-volatile memory device, and when the first memory block is exposed to a temperature lower than the threshold temperature for the threshold period of time, a second command is transmitted to the non-volatile memory device. Transmitting a second command to the non-volatile memory device; charging a word line of the first memory block with a driving voltage in response to the first command; and executing a first operation corresponding to the first request in response to the first command or the second command. 一种存储设备的操作方法包括:监</abstract><oa>free_for_read</oa></addata></record>
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title MEMORY DEVICE AND OPERATING METHOD THEREOF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T00%3A47%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE%20KYUNG-DUK&rft.date=2022-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114649026A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true