Memory, preparation method thereof and memory system

The invention discloses a memory, a preparation method thereof and a memory system, and the method comprises the steps: firstly forming a grid line gap penetrating through a stop layer and a step structure, then forming an isolation structure at the junction of the stop layer and the grid line gap, then replacing an interlayer sacrificial layer with an interlayer gate layer through the grid line gap, and finally forming a contact hole penetrating through the stop layer. And the bottom of the contact hole is located on the interlayer gate layer at each step of the step structure. The isolation structure is arranged between the grid line gap and the stop layer, so that the stop layer cannot be removed in the process of replacing the interlayer sacrificial layer, and the stop layer can be used as an etching stop layer in the subsequent etching process of forming the contact hole, so that the process difficulty and the process cost are reduced. 本发明公开了一种存储器及其制备方法和存储系统，先形成贯穿停止层和台阶结构的栅线缝隙，再在停止层与栅线缝隙的交界处形成隔离结构，接着通过栅线