Semiconductor optical amplifier chip

The invention discloses a semiconductor optical amplifier chip which comprises a lower (N-face) electrode layer, a substrate, a buffer layer, a passive waveguide layer, a buried heterogeneous active region, a buried inclined waveguide layer, a cover layer and an upper (P-face) electrode layer which are sequentially stacked. The buried inclined waveguide layer comprises a strip-shaped inclined waveguide and a conical inclined waveguide, and the conical inclined waveguide is optically connected with the strip-shaped inclined waveguide. Due to the fact that the strip-shaped inclined waveguide and the conical inclined waveguide with the gradually-changed width in the buried inclined waveguide layer are arranged in an inclined mode and have a certain inclination angle, resonance of light waves in the semiconductor optical amplifier is avoided, and the light waves only generate one-way optical gain amplification in the semiconductor optical amplifier. The width of the tapered inclined waveguide is gradually changed