Electron source for generating electron beam
The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energ...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KRIEG MARKUS OTT CHRISTIAN WEBER HEIKE |
| description | The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energy focusing electron beam source, including the application of the electron beam source as an on-chip X-ray source. All elements can be prepared from a single silicon carbide chip or on a single silicon carbide chip.
本发明涉及一种用于产生电子束(8)的电子源(2)，其具有由碳化硅衬底(5)外延生长的以石墨烯层(6,12)形式的阴极(1)和阳极(4)。本发明适用于小型化高能聚焦电子束源的整体制备，包括其用作片上X射线源。所有元件都可以由单个碳化硅芯片或在单个碳化硅芯片上制备。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114521282A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114521282A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114521282A3</originalsourceid><addsrcrecordid>eNrjZNBxzUlNLinKz1Mozi8tSk5VSMsvUkhPzUstSizJzEtXSIVJJ6Um5vIwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsRkoMaSeGc_Q0MTUyNDIwsjR2Ni1AAAnawp0A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electron source for generating electron beam</title><source>esp@cenet</source><creator>KRIEG MARKUS ; OTT CHRISTIAN ; WEBER HEIKE</creator><creatorcontrib>KRIEG MARKUS ; OTT CHRISTIAN ; WEBER HEIKE</creatorcontrib><description>The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energy focusing electron beam source, including the application of the electron beam source as an on-chip X-ray source. All elements can be prepared from a single silicon carbide chip or on a single silicon carbide chip.
本发明涉及一种用于产生电子束(8)的电子源(2)，其具有由碳化硅衬底(5)外延生长的以石墨烯层(6,12)形式的阴极(1)和阳极(4)。本发明适用于小型化高能聚焦电子束源的整体制备，包括其用作片上X射线源。所有元件都可以由单个碳化硅芯片或在单个碳化硅芯片上制备。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220520&DB=EPODOC&CC=CN&NR=114521282A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220520&DB=EPODOC&CC=CN&NR=114521282A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KRIEG MARKUS</creatorcontrib><creatorcontrib>OTT CHRISTIAN</creatorcontrib><creatorcontrib>WEBER HEIKE</creatorcontrib><title>Electron source for generating electron beam</title><description>The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energy focusing electron beam source, including the application of the electron beam source as an on-chip X-ray source. All elements can be prepared from a single silicon carbide chip or on a single silicon carbide chip.
本发明涉及一种用于产生电子束(8)的电子源(2)，其具有由碳化硅衬底(5)外延生长的以石墨烯层(6,12)形式的阴极(1)和阳极(4)。本发明适用于小型化高能聚焦电子束源的整体制备，包括其用作片上X射线源。所有元件都可以由单个碳化硅芯片或在单个碳化硅芯片上制备。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBxzUlNLinKz1Mozi8tSk5VSMsvUkhPzUstSizJzEtXSIVJJ6Um5vIwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsRkoMaSeGc_Q0MTUyNDIwsjR2Ni1AAAnawp0A</recordid><startdate>20220520</startdate><enddate>20220520</enddate><creator>KRIEG MARKUS</creator><creator>OTT CHRISTIAN</creator><creator>WEBER HEIKE</creator><scope>EVB</scope></search><sort><creationdate>20220520</creationdate><title>Electron source for generating electron beam</title><author>KRIEG MARKUS ; OTT CHRISTIAN ; WEBER HEIKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114521282A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>KRIEG MARKUS</creatorcontrib><creatorcontrib>OTT CHRISTIAN</creatorcontrib><creatorcontrib>WEBER HEIKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KRIEG MARKUS</au><au>OTT CHRISTIAN</au><au>WEBER HEIKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electron source for generating electron beam</title><date>2022-05-20</date><risdate>2022</risdate><abstract>The invention relates to an electron source (2) for generating an electron beam (8), having a cathode (1) and an anode (4) in the form of graphene layers (6, 12) epitaxially grown from a silicon carbide substrate (5). The invention is suitable for the overall preparation of a miniaturized high-energy focusing electron beam source, including the application of the electron beam source as an on-chip X-ray source. All elements can be prepared from a single silicon carbide chip or on a single silicon carbide chip.
本发明涉及一种用于产生电子束(8)的电子源(2)，其具有由碳化硅衬底(5)外延生长的以石墨烯层(6,12)形式的阴极(1)和阳极(4)。本发明适用于小型化高能聚焦电子束源的整体制备，包括其用作片上X射线源。所有元件都可以由单个碳化硅芯片或在单个碳化硅芯片上制备。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN114521282A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
| title | Electron source for generating electron beam |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T06%3A38%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KRIEG%20MARKUS&rft.date=2022-05-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114521282A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |