Rectification plate, fluid introduction device, and film formation device
Provided is a rectifying plate capable of suppressing fluctuations in film formation speed on an object to be subjected to film formation. According to one embodiment, a rectifying plate is provided so as to face a plurality of nozzles that eject a fluid, and has a plurality of high-flow-path-resist...
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| creator | DAIGO YOSHIAKI HARUYAMA SHUN UMETSU TAKUTO SHIOZAWA KEIKO FURUYA YUKI |
| description | Provided is a rectifying plate capable of suppressing fluctuations in film formation speed on an object to be subjected to film formation. According to one embodiment, a rectifying plate is provided so as to face a plurality of nozzles that eject a fluid, and has a plurality of high-flow-path-resistance regions that have nozzle-facing regions that respectively face the plurality of nozzles, the low-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles, and the high-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles, and the high-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles. And a plurality of first through-holes surrounding each of the plurality of high-flow-resistance regions, the plurality of first through-holes being formed, and the flow resistance of the first through-holes being smaller than that of the high-flow-resistance regions.
提供能够抑制向成膜对象物的成膜速度的变动的整流板。根据实施方式，整流板具 |
| format | Patent |
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提供能够抑制向成膜对象物的成膜速度的变动的整流板。根据实施方式，整流板具</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220506&DB=EPODOC&CC=CN&NR=114438589A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220506&DB=EPODOC&CC=CN&NR=114438589A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAIGO YOSHIAKI</creatorcontrib><creatorcontrib>HARUYAMA SHUN</creatorcontrib><creatorcontrib>UMETSU TAKUTO</creatorcontrib><creatorcontrib>SHIOZAWA KEIKO</creatorcontrib><creatorcontrib>FURUYA YUKI</creatorcontrib><title>Rectification plate, fluid introduction device, and film formation device</title><description>Provided is a rectifying plate capable of suppressing fluctuations in film formation speed on an object to be subjected to film formation. According to one embodiment, a rectifying plate is provided so as to face a plurality of nozzles that eject a fluid, and has a plurality of high-flow-path-resistance regions that have nozzle-facing regions that respectively face the plurality of nozzles, the low-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles, and the high-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles, and the high-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles. And a plurality of first through-holes surrounding each of the plurality of high-flow-resistance regions, the plurality of first through-holes being formed, and the flow resistance of the first through-holes being smaller than that of the high-flow-resistance regions.
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According to one embodiment, a rectifying plate is provided so as to face a plurality of nozzles that eject a fluid, and has a plurality of high-flow-path-resistance regions that have nozzle-facing regions that respectively face the plurality of nozzles, the low-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles, and the high-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles, and the high-flow-path-resistance regions that have nozzle-facing regions that face the plurality of nozzles. And a plurality of first through-holes surrounding each of the plurality of high-flow-resistance regions, the plurality of first through-holes being formed, and the flow resistance of the first through-holes being smaller than that of the high-flow-resistance regions.
提供能够抑制向成膜对象物的成膜速度的变动的整流板。根据实施方式，整流板具</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Rectification plate, fluid introduction device, and film formation device |
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