Airtight high-temperature-resistant packaging structure with inverted double-sided heat dissipation chip

The invention discloses an air-tight high-temperature-resistant packaging structure with inverted double-sided heat dissipation chips. The air-tight high-temperature-resistant packaging structure comprises an upper ceramic substrate, a lower ceramic substrate and a metal sealing tape, a first metall...

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Hauptverfasser: YANG CHENGZI, YANG FENGTAO, KONG HANG, ZHU MENGYU, WANG LAILI, QI ZHIYUAN, WU MIN, GUO WEILI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses an air-tight high-temperature-resistant packaging structure with inverted double-sided heat dissipation chips. The air-tight high-temperature-resistant packaging structure comprises an upper ceramic substrate, a lower ceramic substrate and a metal sealing tape, a first metallization region, a second metallization region, a third metallization region, a fourth metallization region, a fifth metallization region, a sixth metallization region, a seventh metallization region, an eighth metallization region, a SiC MOSFET of an upper bridge arm, a SiC MOSFET of a lower bridge arm, a first gasket, a second gasket, a third gasket and a fourth gasket are arranged in the upper ceramic substrate; and the back surface of the upper ceramic substrate is provided with a first back metallization region, a second back metallization region, a third back metallization region, a fourth back metallization region, a fifth back metallization region, a sixth back metallization region and a seventh back metalli