Atomic layer deposition MgZnO film and research method and application thereof
The invention relates to the technical field, in particular to an atomic layer deposition MgZnO thin film and a research method and application thereof, and the atomic layer deposition MgZnO thin film is prepared from the following components through reaction: H2O, diethyl zinc Zn (CH2CH3) 2 (DEZn,...
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| creator | DONG MEI CHEN JIEXIN GUO JIANJUN LIN LIJUN JI XU LIANG ZHIHUA KONG IL-WOO YE JUNWEI MA JIASHENG LI JIACHAN LIU TONGLAI |
| description | The invention relates to the technical field, in particular to an atomic layer deposition MgZnO thin film and a research method and application thereof, and the atomic layer deposition MgZnO thin film is prepared from the following components through reaction: H2O, diethyl zinc Zn (CH2CH3) 2 (DEZn, a magnesium source and ferrocene magnesium Mg (C5H5) 2 (CP2Mg). Carrying out oxygen-assisted plasma pretreatment on the surface of the Hr-ZnO substrate before growth; diethyl zinc DEZn is introduced into the growth chamber, self-limiting surface chemical adsorption is carried out on the surface of the Hr-ZnO substrate, and a Zn (CH2CH3) * surface state is formed; then reacting with an introduced oxygen source precursor H2O to generate ZnOH *; removing a reaction by-product CH3CH3 and the balance of the precursor source, and reacting a magnesium precursor CP2Mg with the generated surface state ZnOH * to obtain a new surface state Mg (C5H5) *; the method comprises the following steps: reacting surface state Mg (C5H5) |
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Carrying out oxygen-assisted plasma pretreatment on the surface of the Hr-ZnO substrate before growth; diethyl zinc DEZn is introduced into the growth chamber, self-limiting surface chemical adsorption is carried out on the surface of the Hr-ZnO substrate, and a Zn (CH2CH3) * surface state is formed; then reacting with an introduced oxygen source precursor H2O to generate ZnOH *; removing a reaction by-product CH3CH3 and the balance of the precursor source, and reacting a magnesium precursor CP2Mg with the generated surface state ZnOH * to obtain a new surface state Mg (C5H5) *; the method comprises the following steps: reacting surface state Mg (C5H5)</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220422&DB=EPODOC&CC=CN&NR=114381712A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220422&DB=EPODOC&CC=CN&NR=114381712A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DONG MEI</creatorcontrib><creatorcontrib>CHEN JIEXIN</creatorcontrib><creatorcontrib>GUO JIANJUN</creatorcontrib><creatorcontrib>LIN LIJUN</creatorcontrib><creatorcontrib>JI XU</creatorcontrib><creatorcontrib>LIANG ZHIHUA</creatorcontrib><creatorcontrib>KONG IL-WOO</creatorcontrib><creatorcontrib>YE JUNWEI</creatorcontrib><creatorcontrib>MA JIASHENG</creatorcontrib><creatorcontrib>LI JIACHAN</creatorcontrib><creatorcontrib>LIU TONGLAI</creatorcontrib><title>Atomic layer deposition MgZnO film and research method and application thereof</title><description>The invention relates to the technical field, in particular to an atomic layer deposition MgZnO thin film and a research method and application thereof, and the atomic layer deposition MgZnO thin film is prepared from the following components through reaction: H2O, diethyl zinc Zn (CH2CH3) 2 (DEZn, a magnesium source and ferrocene magnesium Mg (C5H5) 2 (CP2Mg). 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Carrying out oxygen-assisted plasma pretreatment on the surface of the Hr-ZnO substrate before growth; diethyl zinc DEZn is introduced into the growth chamber, self-limiting surface chemical adsorption is carried out on the surface of the Hr-ZnO substrate, and a Zn (CH2CH3) * surface state is formed; then reacting with an introduced oxygen source precursor H2O to generate ZnOH *; removing a reaction by-product CH3CH3 and the balance of the precursor source, and reacting a magnesium precursor CP2Mg with the generated surface state ZnOH * to obtain a new surface state Mg (C5H5) *; the method comprises the following steps: reacting surface state Mg (C5H5)</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Atomic layer deposition MgZnO film and research method and application thereof |
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