Chemical mechanical polishing slurry composition and method for polishing tungsten pattern wafer using same

The present invention relates to a chemical mechanical polishing slurry composition for polishing a tungsten pattern wafer and a method for polishing a tungsten pattern wafer using the same. A chemical mechanical polishing composition includes a solvent and an abrasive. The abrasive comprises silica...

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Bibliographische Detailangaben
Hauptverfasser:	LEE EUI-RANG, KIM HYEONG-MOOK, KIM WON JUNG, KOO YOON-YOUNG, PARK TAE-WON, LEE JONG-WON, CHO YOUN-JIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a chemical mechanical polishing slurry composition for polishing a tungsten pattern wafer and a method for polishing a tungsten pattern wafer using the same. A chemical mechanical polishing composition includes a solvent and an abrasive. The abrasive comprises silica modified with a polyethyleneimine-derived aminosilane, and the composition has a pH of from 4 to 7. The composition can improve the polishing rate and flatness of the tungsten pattern wafer while suppressing the generation of scratch defects after polishing. 本发明涉及一种用于抛光钨图案晶片的化学机械抛光浆料组合物和使用其抛光钨图案晶片的方法。化学机械抛光组合物包含溶剂和研磨剂。研磨剂包含用聚乙烯亚胺衍生的氨基硅烷改性的二氧化硅，且组合物具有4到7的pH。所述组合物可改进钨图案晶片的抛光速率和平整度，同时抑制在抛光后产生刮痕缺陷。