Semiconductor device structure
The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a first channel layer having a first surface and a second surface, and a second channel layer having a first surface and a second surface opposite to each other, the first channel l...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | XIE WENXING SU JIAYING WANG ZHIQING WU ZHIQIANG CHEN WENYUAN WU ZHONGWEI HE JIONGXU |
| description | The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a first channel layer having a first surface and a second surface, and a second channel layer having a first surface and a second surface opposite to each other, the first channel layer and the second channel layer being made of a first material. The structure also includes a first dopant suppression layer contacting a second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer contacts the first surface of the second channel layer, and the first dopant suppression layer and the second dopant suppression layer each contain carbon or fluorine. The structure also includes a gate dielectric layer contacting the first dopant suppression layer, the second dopant suppression layer and a first surface of the first channel layer, and a gate layer on the gate dielectric layer.
本发明实施例提供一种半导体装置结构。半导体 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114334960A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114334960A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114334960A3</originalsourceid><addsrcrecordid>eNrjZJALTs3NTM7PSylNLskvUkhJLctMTlUoLikC8kuLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GhibGxiaWZgaMxMWoALeElAw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device structure</title><source>esp@cenet</source><creator>XIE WENXING ; SU JIAYING ; WANG ZHIQING ; WU ZHIQIANG ; CHEN WENYUAN ; WU ZHONGWEI ; HE JIONGXU</creator><creatorcontrib>XIE WENXING ; SU JIAYING ; WANG ZHIQING ; WU ZHIQIANG ; CHEN WENYUAN ; WU ZHONGWEI ; HE JIONGXU</creatorcontrib><description>The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a first channel layer having a first surface and a second surface, and a second channel layer having a first surface and a second surface opposite to each other, the first channel layer and the second channel layer being made of a first material. The structure also includes a first dopant suppression layer contacting a second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer contacts the first surface of the second channel layer, and the first dopant suppression layer and the second dopant suppression layer each contain carbon or fluorine. The structure also includes a gate dielectric layer contacting the first dopant suppression layer, the second dopant suppression layer and a first surface of the first channel layer, and a gate layer on the gate dielectric layer.
本发明实施例提供一种半导体装置结构。半导体</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220412&DB=EPODOC&CC=CN&NR=114334960A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220412&DB=EPODOC&CC=CN&NR=114334960A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIE WENXING</creatorcontrib><creatorcontrib>SU JIAYING</creatorcontrib><creatorcontrib>WANG ZHIQING</creatorcontrib><creatorcontrib>WU ZHIQIANG</creatorcontrib><creatorcontrib>CHEN WENYUAN</creatorcontrib><creatorcontrib>WU ZHONGWEI</creatorcontrib><creatorcontrib>HE JIONGXU</creatorcontrib><title>Semiconductor device structure</title><description>The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a first channel layer having a first surface and a second surface, and a second channel layer having a first surface and a second surface opposite to each other, the first channel layer and the second channel layer being made of a first material. The structure also includes a first dopant suppression layer contacting a second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer contacts the first surface of the second channel layer, and the first dopant suppression layer and the second dopant suppression layer each contain carbon or fluorine. The structure also includes a gate dielectric layer contacting the first dopant suppression layer, the second dopant suppression layer and a first surface of the first channel layer, and a gate layer on the gate dielectric layer.
本发明实施例提供一种半导体装置结构。半导体</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALTs3NTM7PSylNLskvUkhJLctMTlUoLikC8kuLUnkYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GhibGxiaWZgaMxMWoALeElAw</recordid><startdate>20220412</startdate><enddate>20220412</enddate><creator>XIE WENXING</creator><creator>SU JIAYING</creator><creator>WANG ZHIQING</creator><creator>WU ZHIQIANG</creator><creator>CHEN WENYUAN</creator><creator>WU ZHONGWEI</creator><creator>HE JIONGXU</creator><scope>EVB</scope></search><sort><creationdate>20220412</creationdate><title>Semiconductor device structure</title><author>XIE WENXING ; SU JIAYING ; WANG ZHIQING ; WU ZHIQIANG ; CHEN WENYUAN ; WU ZHONGWEI ; HE JIONGXU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114334960A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>XIE WENXING</creatorcontrib><creatorcontrib>SU JIAYING</creatorcontrib><creatorcontrib>WANG ZHIQING</creatorcontrib><creatorcontrib>WU ZHIQIANG</creatorcontrib><creatorcontrib>CHEN WENYUAN</creatorcontrib><creatorcontrib>WU ZHONGWEI</creatorcontrib><creatorcontrib>HE JIONGXU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XIE WENXING</au><au>SU JIAYING</au><au>WANG ZHIQING</au><au>WU ZHIQIANG</au><au>CHEN WENYUAN</au><au>WU ZHONGWEI</au><au>HE JIONGXU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device structure</title><date>2022-04-12</date><risdate>2022</risdate><abstract>The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a first channel layer having a first surface and a second surface, and a second channel layer having a first surface and a second surface opposite to each other, the first channel layer and the second channel layer being made of a first material. The structure also includes a first dopant suppression layer contacting a second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer contacts the first surface of the second channel layer, and the first dopant suppression layer and the second dopant suppression layer each contain carbon or fluorine. The structure also includes a gate dielectric layer contacting the first dopant suppression layer, the second dopant suppression layer and a first surface of the first channel layer, and a gate layer on the gate dielectric layer.
本发明实施例提供一种半导体装置结构。半导体</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN114334960A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T08%3A46%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=XIE%20WENXING&rft.date=2022-04-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114334960A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |