Formation method of fin structure and formation method of FinFET device

The invention provides a fin structure forming method and a FinFET device forming method, and the fin structure forming method comprises the steps: providing a substrate which is provided with at least two fin groups which are arranged at intervals; forming an isolation film, and filling the fins an...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	LAW YINN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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