Hydrogen sensor and preparation method thereof

The invention discloses a hydrogen sensor and a preparation method thereof, belongs to the technical field of sensors, and is used for solving the technical problem that an existing hydrogen sensor is weak in anti-interference performance. The hydrogen sensor specifically comprises a silicon wafer s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHE YANXIAN, ZHANG HAO, XIE GUIJIU, ZHANG YUEXIN, HE FENG, DING DING
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHE YANXIAN
ZHANG HAO
XIE GUIJIU
ZHANG YUEXIN
HE FENG
DING DING
description The invention discloses a hydrogen sensor and a preparation method thereof, belongs to the technical field of sensors, and is used for solving the technical problem that an existing hydrogen sensor is weak in anti-interference performance. The hydrogen sensor specifically comprises a silicon wafer substrate, and a thin film electrical isolation layer is arranged on the silicon wafer substrate; a heating resistor, a temperature measuring resistor and a hydrogen sensitive resistor are arranged on the film electrical isolation layer, the heating resistor, the temperature measuring resistor and the hydrogen sensitive resistor are all provided with lead ends, and an organic polymer film layer is arranged above the hydrogen sensitive resistor. The invention has the advantages of stable performance, long service life, low cost, good anti-interference performance and the like. 本发明公开了一种氢气传感器及其制备方法,属于传感器技术领域,用于解决目前氢气传感器抗干扰性能弱的技术问题,氢气传感器具体包括硅片衬底,所述硅片衬底上设有薄膜电气隔离层,所述薄膜电气隔离层上设有加热电阻、测温电阻和氢敏电阻,所述加热电阻、测温电阻和氢敏电阻均设置有引线端,所述氢敏电阻的
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN114280107A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN114280107A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN114280107A3</originalsourceid><addsrcrecordid>eNrjZNDzqEwpyk9PzVMoTs0rzi9SSMxLUSgoSi1ILEosyczPU8hNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYmRhYGhgbmjsbEqAEAGPAqxQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Hydrogen sensor and preparation method thereof</title><source>esp@cenet</source><creator>CHE YANXIAN ; ZHANG HAO ; XIE GUIJIU ; ZHANG YUEXIN ; HE FENG ; DING DING</creator><creatorcontrib>CHE YANXIAN ; ZHANG HAO ; XIE GUIJIU ; ZHANG YUEXIN ; HE FENG ; DING DING</creatorcontrib><description>The invention discloses a hydrogen sensor and a preparation method thereof, belongs to the technical field of sensors, and is used for solving the technical problem that an existing hydrogen sensor is weak in anti-interference performance. The hydrogen sensor specifically comprises a silicon wafer substrate, and a thin film electrical isolation layer is arranged on the silicon wafer substrate; a heating resistor, a temperature measuring resistor and a hydrogen sensitive resistor are arranged on the film electrical isolation layer, the heating resistor, the temperature measuring resistor and the hydrogen sensitive resistor are all provided with lead ends, and an organic polymer film layer is arranged above the hydrogen sensitive resistor. The invention has the advantages of stable performance, long service life, low cost, good anti-interference performance and the like. 本发明公开了一种氢气传感器及其制备方法,属于传感器技术领域,用于解决目前氢气传感器抗干扰性能弱的技术问题,氢气传感器具体包括硅片衬底,所述硅片衬底上设有薄膜电气隔离层,所述薄膜电气隔离层上设有加热电阻、测温电阻和氢敏电阻,所述加热电阻、测温电阻和氢敏电阻均设置有引线端,所述氢敏电阻的</description><language>chi ; eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING QUANTITY OF HEAT ; MEASURING TEMPERATURE ; PHYSICS ; TESTING ; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220405&amp;DB=EPODOC&amp;CC=CN&amp;NR=114280107A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220405&amp;DB=EPODOC&amp;CC=CN&amp;NR=114280107A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHE YANXIAN</creatorcontrib><creatorcontrib>ZHANG HAO</creatorcontrib><creatorcontrib>XIE GUIJIU</creatorcontrib><creatorcontrib>ZHANG YUEXIN</creatorcontrib><creatorcontrib>HE FENG</creatorcontrib><creatorcontrib>DING DING</creatorcontrib><title>Hydrogen sensor and preparation method thereof</title><description>The invention discloses a hydrogen sensor and a preparation method thereof, belongs to the technical field of sensors, and is used for solving the technical problem that an existing hydrogen sensor is weak in anti-interference performance. The hydrogen sensor specifically comprises a silicon wafer substrate, and a thin film electrical isolation layer is arranged on the silicon wafer substrate; a heating resistor, a temperature measuring resistor and a hydrogen sensitive resistor are arranged on the film electrical isolation layer, the heating resistor, the temperature measuring resistor and the hydrogen sensitive resistor are all provided with lead ends, and an organic polymer film layer is arranged above the hydrogen sensitive resistor. The invention has the advantages of stable performance, long service life, low cost, good anti-interference performance and the like. 本发明公开了一种氢气传感器及其制备方法,属于传感器技术领域,用于解决目前氢气传感器抗干扰性能弱的技术问题,氢气传感器具体包括硅片衬底,所述硅片衬底上设有薄膜电气隔离层,所述薄膜电气隔离层上设有加热电阻、测温电阻和氢敏电阻,所述加热电阻、测温电阻和氢敏电阻均设置有引线端,所述氢敏电阻的</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>MEASURING QUANTITY OF HEAT</subject><subject>MEASURING TEMPERATURE</subject><subject>PHYSICS</subject><subject>TESTING</subject><subject>THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzqEwpyk9PzVMoTs0rzi9SSMxLUSgoSi1ILEosyczPU8hNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYmRhYGhgbmjsbEqAEAGPAqxQ</recordid><startdate>20220405</startdate><enddate>20220405</enddate><creator>CHE YANXIAN</creator><creator>ZHANG HAO</creator><creator>XIE GUIJIU</creator><creator>ZHANG YUEXIN</creator><creator>HE FENG</creator><creator>DING DING</creator><scope>EVB</scope></search><sort><creationdate>20220405</creationdate><title>Hydrogen sensor and preparation method thereof</title><author>CHE YANXIAN ; ZHANG HAO ; XIE GUIJIU ; ZHANG YUEXIN ; HE FENG ; DING DING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114280107A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MEASURING QUANTITY OF HEAT</topic><topic>MEASURING TEMPERATURE</topic><topic>PHYSICS</topic><topic>TESTING</topic><topic>THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>CHE YANXIAN</creatorcontrib><creatorcontrib>ZHANG HAO</creatorcontrib><creatorcontrib>XIE GUIJIU</creatorcontrib><creatorcontrib>ZHANG YUEXIN</creatorcontrib><creatorcontrib>HE FENG</creatorcontrib><creatorcontrib>DING DING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHE YANXIAN</au><au>ZHANG HAO</au><au>XIE GUIJIU</au><au>ZHANG YUEXIN</au><au>HE FENG</au><au>DING DING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hydrogen sensor and preparation method thereof</title><date>2022-04-05</date><risdate>2022</risdate><abstract>The invention discloses a hydrogen sensor and a preparation method thereof, belongs to the technical field of sensors, and is used for solving the technical problem that an existing hydrogen sensor is weak in anti-interference performance. The hydrogen sensor specifically comprises a silicon wafer substrate, and a thin film electrical isolation layer is arranged on the silicon wafer substrate; a heating resistor, a temperature measuring resistor and a hydrogen sensitive resistor are arranged on the film electrical isolation layer, the heating resistor, the temperature measuring resistor and the hydrogen sensitive resistor are all provided with lead ends, and an organic polymer film layer is arranged above the hydrogen sensitive resistor. The invention has the advantages of stable performance, long service life, low cost, good anti-interference performance and the like. 本发明公开了一种氢气传感器及其制备方法,属于传感器技术领域,用于解决目前氢气传感器抗干扰性能弱的技术问题,氢气传感器具体包括硅片衬底,所述硅片衬底上设有薄膜电气隔离层,所述薄膜电气隔离层上设有加热电阻、测温电阻和氢敏电阻,所述加热电阻、测温电阻和氢敏电阻均设置有引线端,所述氢敏电阻的</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN114280107A
source esp@cenet
subjects INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING QUANTITY OF HEAT
MEASURING TEMPERATURE
PHYSICS
TESTING
THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
title Hydrogen sensor and preparation method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T11%3A14%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHE%20YANXIAN&rft.date=2022-04-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN114280107A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true