Semiconductor laser fault analysis method, sample preparation method and system
The invention provides a fault analysis method of a semiconductor laser, and a sample preparation method and system. The method comprises the following steps: sealing and curing a semiconductor laser to be analyzed through a curing agent, wherein the curing agent and a TO bracket form a sealing regi...
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| creator | ZHANG JUNZONG GAO QIANG ZHENG CHAOHUI |
| description | The invention provides a fault analysis method of a semiconductor laser, and a sample preparation method and system. The method comprises the following steps: sealing and curing a semiconductor laser to be analyzed through a curing agent, wherein the curing agent and a TO bracket form a sealing region to seal a chip in the sealing region; grinding the to-be-analyzed semiconductor laser after glue sealing and curing until the crystal back of the chip is exposed to obtain a ground semiconductor laser; hotspot positioning is carried out on the ground semiconductor laser based on the crystal back so as to carry out failure analysis, so that the crystal back of the laser can be completely exposed, damage or fragmentation caused by grinding and exposure of the device due to overlarge grinding stress is avoided, and the bottleneck that failure positioning can only be carried out on the laser sample from the front side at present is broken through.
本申请提供了一种半导体激光器的故障分析方法、样品的制备方法及系统。该方法包括：通过固化剂对待分析半导体激光器进行封胶固化，固化剂以及TO支 |
| format | Patent |
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本申请提供了一种半导体激光器的故障分析方法、样品的制备方法及系统。该方法包括：通过固化剂对待分析半导体激光器进行封胶固化，固化剂以及TO支</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220329&DB=EPODOC&CC=CN&NR=114252319A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220329&DB=EPODOC&CC=CN&NR=114252319A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG JUNZONG</creatorcontrib><creatorcontrib>GAO QIANG</creatorcontrib><creatorcontrib>ZHENG CHAOHUI</creatorcontrib><title>Semiconductor laser fault analysis method, sample preparation method and system</title><description>The invention provides a fault analysis method of a semiconductor laser, and a sample preparation method and system. The method comprises the following steps: sealing and curing a semiconductor laser to be analyzed through a curing agent, wherein the curing agent and a TO bracket form a sealing region to seal a chip in the sealing region; grinding the to-be-analyzed semiconductor laser after glue sealing and curing until the crystal back of the chip is exposed to obtain a ground semiconductor laser; hotspot positioning is carried out on the ground semiconductor laser based on the crystal back so as to carry out failure analysis, so that the crystal back of the laser can be completely exposed, damage or fragmentation caused by grinding and exposure of the device due to overlarge grinding stress is avoided, and the bottleneck that failure positioning can only be carried out on the laser sample from the front side at present is broken through.
本申请提供了一种半导体激光器的故障分析方法、样品的制备方法及系统。该方法包括：通过固化剂对待分析半导体激光器进行封胶固化，固化剂以及TO支</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0OwjAMQOEsDAi4g9lhSAsDI6pATDDAXlmJq0bKjxW7Q28PQw_A9Ib3rc3rTSm4kv3ktFSIKFRhwCkqYMY4SxBIpGPxBxBMHAm4EmNFDSUv60c9yCxKaWtWA0ah3dKN2d9vn-5xJC49CaOjTNp3T2tPzblp7eXa_mO-omo3cQ</recordid><startdate>20220329</startdate><enddate>20220329</enddate><creator>ZHANG JUNZONG</creator><creator>GAO QIANG</creator><creator>ZHENG CHAOHUI</creator><scope>EVB</scope></search><sort><creationdate>20220329</creationdate><title>Semiconductor laser fault analysis method, sample preparation method and system</title><author>ZHANG JUNZONG ; GAO QIANG ; ZHENG CHAOHUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114252319A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG JUNZONG</creatorcontrib><creatorcontrib>GAO QIANG</creatorcontrib><creatorcontrib>ZHENG CHAOHUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG JUNZONG</au><au>GAO QIANG</au><au>ZHENG CHAOHUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor laser fault analysis method, sample preparation method and system</title><date>2022-03-29</date><risdate>2022</risdate><abstract>The invention provides a fault analysis method of a semiconductor laser, and a sample preparation method and system. The method comprises the following steps: sealing and curing a semiconductor laser to be analyzed through a curing agent, wherein the curing agent and a TO bracket form a sealing region to seal a chip in the sealing region; grinding the to-be-analyzed semiconductor laser after glue sealing and curing until the crystal back of the chip is exposed to obtain a ground semiconductor laser; hotspot positioning is carried out on the ground semiconductor laser based on the crystal back so as to carry out failure analysis, so that the crystal back of the laser can be completely exposed, damage or fragmentation caused by grinding and exposure of the device due to overlarge grinding stress is avoided, and the bottleneck that failure positioning can only be carried out on the laser sample from the front side at present is broken through.
本申请提供了一种半导体激光器的故障分析方法、样品的制备方法及系统。该方法包括：通过固化剂对待分析半导体激光器进行封胶固化，固化剂以及TO支</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
| title | Semiconductor laser fault analysis method, sample preparation method and system |
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