Semiconductor structure and forming method thereof

The invention discloses a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a substrate which is provided with an interlayer dielectric layer; a gate structure on the substrate; the source-drain doping layer is positioned in the substrate on two sides of...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HAN QIUHUA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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