Semiconductor memory device and operating method thereof
Disclosed is a method of performing access to a memory device at a controller, the method including: transmitting, at the controller, a first command signal, a first address signal, and a first harmonic signal to the memory device; selecting a first data bit stored in a memory cell array of the memo...
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creator | YOO YOUNGKWANG NAM HEE-HYUN LEE KWANG-JIN LEE JEONG HO SHIN JAE-HO |
description | Disclosed is a method of performing access to a memory device at a controller, the method including: transmitting, at the controller, a first command signal, a first address signal, and a first harmonic signal to the memory device; selecting a first data bit stored in a memory cell array of the memory device based on the first command signal and the first address signal; and sequentially outputting, at the memory device, at least a portion of the first data bits to the controller in a burst manner based on the first harmonic signal.
公开了一种在控制器执行对存储器件的访问的方法,所述方法包括:在所述控制器,向所述存储器件发送第一命令信号、第一地址信号和第一调和信号;基于所述第一命令信号和所述第一地址信号选择存储在所述存储器件的存储单元阵列中的第一数据位;以及在所述存储器件,基于所述第一调和信号,以突发方式向所述控制器顺序地输出所述第一数据位中的至少一部分数据位。 |
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公开了一种在控制器执行对存储器件的访问的方法,所述方法包括:在所述控制器,向所述存储器件发送第一命令信号、第一地址信号和第一调和信号;基于所述第一命令信号和所述第一地址信号选择存储在所述存储器件的存储单元阵列中的第一数据位;以及在所述存储器件,基于所述第一调和信号,以突发方式向所述控制器顺序地输出所述第一数据位中的至少一部分数据位。</description><language>chi ; eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220304&DB=EPODOC&CC=CN&NR=114138174A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220304&DB=EPODOC&CC=CN&NR=114138174A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOO YOUNGKWANG</creatorcontrib><creatorcontrib>NAM HEE-HYUN</creatorcontrib><creatorcontrib>LEE KWANG-JIN</creatorcontrib><creatorcontrib>LEE JEONG HO</creatorcontrib><creatorcontrib>SHIN JAE-HO</creatorcontrib><title>Semiconductor memory device and operating method thereof</title><description>Disclosed is a method of performing access to a memory device at a controller, the method including: transmitting, at the controller, a first command signal, a first address signal, and a first harmonic signal to the memory device; selecting a first data bit stored in a memory cell array of the memory device based on the first command signal and the first address signal; and sequentially outputting, at the memory device, at least a portion of the first data bits to the controller in a burst manner based on the first harmonic signal.
公开了一种在控制器执行对存储器件的访问的方法,所述方法包括:在所述控制器,向所述存储器件发送第一命令信号、第一地址信号和第一调和信号;基于所述第一命令信号和所述第一地址信号选择存储在所述存储器件的存储单元阵列中的第一数据位;以及在所述存储器件,基于所述第一调和信号,以突发方式向所述控制器顺序地输出所述第一数据位中的至少一部分数据位。</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAITs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLUcgvSC1KLMnMSwfKlWTkpyiUZKQWpean8TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_Q0MTQ2MLQ3MTR2Ni1AAAPEourQ</recordid><startdate>20220304</startdate><enddate>20220304</enddate><creator>YOO YOUNGKWANG</creator><creator>NAM HEE-HYUN</creator><creator>LEE KWANG-JIN</creator><creator>LEE JEONG HO</creator><creator>SHIN JAE-HO</creator><scope>EVB</scope></search><sort><creationdate>20220304</creationdate><title>Semiconductor memory device and operating method thereof</title><author>YOO YOUNGKWANG ; NAM HEE-HYUN ; LEE KWANG-JIN ; LEE JEONG HO ; SHIN JAE-HO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN114138174A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>YOO YOUNGKWANG</creatorcontrib><creatorcontrib>NAM HEE-HYUN</creatorcontrib><creatorcontrib>LEE KWANG-JIN</creatorcontrib><creatorcontrib>LEE JEONG HO</creatorcontrib><creatorcontrib>SHIN JAE-HO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOO YOUNGKWANG</au><au>NAM HEE-HYUN</au><au>LEE KWANG-JIN</au><au>LEE JEONG HO</au><au>SHIN JAE-HO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device and operating method thereof</title><date>2022-03-04</date><risdate>2022</risdate><abstract>Disclosed is a method of performing access to a memory device at a controller, the method including: transmitting, at the controller, a first command signal, a first address signal, and a first harmonic signal to the memory device; selecting a first data bit stored in a memory cell array of the memory device based on the first command signal and the first address signal; and sequentially outputting, at the memory device, at least a portion of the first data bits to the controller in a burst manner based on the first harmonic signal.
公开了一种在控制器执行对存储器件的访问的方法,所述方法包括:在所述控制器,向所述存储器件发送第一命令信号、第一地址信号和第一调和信号;基于所述第一命令信号和所述第一地址信号选择存储在所述存储器件的存储单元阵列中的第一数据位;以及在所述存储器件,基于所述第一调和信号,以突发方式向所述控制器顺序地输出所述第一数据位中的至少一部分数据位。</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS |
title | Semiconductor memory device and operating method thereof |
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