Method for manufacturing floating gate TiN film of ultra-flash memory

Method for manufacturing floating gate TiN film of ultra-flash memory

The invention discloses a method for manufacturing a floating gate TiN film of an ultra-flash memory, which comprises the following steps of: completing a preorder process according to the prior art until groove etching is completed; transferring to HK FOUP, and depositing TiN; depositing an oxide l...

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Hauptverfasser: WEN HAIDONG, GAO HAIXIA
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WEN HAIDONG
GAO HAIXIA
description The invention discloses a method for manufacturing a floating gate TiN film of an ultra-flash memory, which comprises the following steps of: completing a preorder process according to the prior art until groove etching is completed; transferring to HK FOUP, and depositing TiN; depositing an oxide layer, and wrapping TiN; wafer back cleaning is transferred to HL FOUP; photoetching to define a protection region and a non-protection region, forming a protection layer to protect the protection region, and exposing the non-protection region; turning to HK FOUP, etching to remove the oxide layer in the non-protection region, and exposing the TiN in the non-protection region; removing the protection layer of the protection area; etching to remove TiN in a non-protection region; depositing an oxide layer, and wrapping TiN of the protection area; etching to remove the oxide layer at the top of the protection region and the bottom of the groove to form an oxide layer side wall; and etching to remove the TiN at the top
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for manufacturing floating gate TiN film of ultra-flash memory
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