RINSE AND METHOD OF USE THEREOF FOR REMOVING EDGE PROTECTION LAYERS AND RESIDUAL METAL HARDMASK COMPONENTS

The disclosed subject matter relates to a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate where the rinse includes acetic acid and/or a halogenated acetic acid...

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Hauptverfasser: CHO JUN-YEON, MULLEN SALEM K, RAHMAN M DALIL
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The disclosed subject matter relates to a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate where the rinse includes acetic acid and/or a halogenated acetic acid of structure (A) wherein R1 and R2 are independently hydrogen or a halogen and R3 is a halogen and (ii) a compound having structure (B) wherein each of Ra, Rb, Rc, Rd, Re, Rf, Rg and Rh may independently be hydrogen, a substituted or an unsubstituted alkyl group, a substituted or an unsubstituted halogenated alkyl group, a substituted or an unsubstituted alkyl carbonyl group, a halogen, and a hydroxy group. 本发明涉及一种用于从晶圆/基板的边缘及至少一个近表面移除边缘保护层及残余硬掩模组分(例如,金属)的冲洗剂及其使用方法,其中该冲洗剂包括(i)乙酸及/或结构(A)的卤化乙酸:其中R1及R2独立地为氢或卤素且R3为卤素,及(ii)具有结构(B)的化合物:其中Ra、Rb、Rc、Rd、Re、Rf、Rg及Rh中的每一者可独立地为氢、经取代或未经取代的烷基、经取代或未经取代的卤化烷基、经取代或未经取代的烷基羰基、卤素及羟基。