POWER MODULE WITH AT LEAST TWO POWER SEMICONDUCTOR ASSEMBLIES CONTACTED ON A SUBSTRATE

The invention relates to a power module with at least two power semiconductor assemblies contacted on a substrate. The power module includes at least two power semiconductor arrangements (6, 8), in contact with substrate (4) and arranged in a housing (18). To improve the reliability of the power mod...

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Hauptverfasser: ZEYSS FELIX, NAMYSLO LUTZ, GOSPOS ROBERT, KURTEN BERND, BOTAZZOLI PIETRO, ENDRES MICHAEL, HOHNE SILVIO
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creator ZEYSS FELIX
NAMYSLO LUTZ
GOSPOS ROBERT
KURTEN BERND
BOTAZZOLI PIETRO
ENDRES MICHAEL
HOHNE SILVIO
description The invention relates to a power module with at least two power semiconductor assemblies contacted on a substrate. The power module includes at least two power semiconductor arrangements (6, 8), in contact with substrate (4) and arranged in a housing (18). To improve the reliability of the power module (2), each of the semiconductor arrangements (6, 8) has at least one semiconductor component, power connectors (DCp, DCn, AC) are arranged on opposite sides (20, 22) of the housing (18), wherein supply lines (24) extending from the power connectors (DCp, DCn, AC) to the power semiconductor arrangements (6, 8) are arranged on the substrate (4) in such a manner that electrical current is provided in a symmetrical manner. 本发明涉及具有至少两个在基底上接触的功率半导体布置的功率模块,其中,该功率模块具有至少两个在基底(4)上接触的、布置在壳体(18)中的功率半导体布置(6、8)。为改进功率模块(2)的可靠性,提出功率半导体布置(6、8)分别具有至少一个半导体构件(10),其中,壳体(18)在相对置的侧(20、22)上具有功率接口(DCp、DCn、AC),其中,基底(4)具有从功率接口(DCp、DCn、AC)到功率半导体布置(6、8)的馈电线(24),其中,馈电线(24、28、30)布置在基底(4)上,使得实现对称的电流引导。
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subjects APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
title POWER MODULE WITH AT LEAST TWO POWER SEMICONDUCTOR ASSEMBLIES CONTACTED ON A SUBSTRATE
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