Magnetoresistive random access memory structure and manufacturing method thereof

The invention discloses a magnetoresistive random access memory structure and a manufacturing method thereof. The magnetoresistive random access memory structure includes a dielectric layer; the first magnetoresistive random access memory, the second magnetoresistive random access memory and the thi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CAI MINHUA, HOU TAICHENG, CAI FUYU, LIN DAJUN, CAI BINXIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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