Magnetoresistive random access memory structure and manufacturing method thereof

The invention discloses a magnetoresistive random access memory structure and a manufacturing method thereof. The magnetoresistive random access memory structure includes a dielectric layer; the first magnetoresistive random access memory, the second magnetoresistive random access memory and the third magnetoresistive random access memory are arranged on the dielectric layer from right to left; the second magnetoresistive random access memory comprises a magnetic tunnel junction; the two gaps are respectively positioned between the first magnetoresistive random access memory and the second magnetoresistive random access memory and between the second magnetoresistive random access memory and the third magnetoresistive random access memory; the two stretching stress material blocks are respectively arranged in the gaps; a first compressive stress layer surrounds and contacts all side walls of the magnetic tunnel junction, and a second compressive stress layer covers the opening of each gap and contacts the stre