Preparation method of alignment mark and preparation method of fin field effect transistor

The embodiment of the invention provides a preparation method of an alignment mark and a preparation method of a fin field effect transistor, and relates to the technical field of semiconductors. The preparation method of the alignment mark comprises the following steps: forming a fin part on a subs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN QINGHUANG, WANG JIANMING, ZENG WEISHUN, LIU ZHICHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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