Preparation method of alignment mark and preparation method of fin field effect transistor

The embodiment of the invention provides a preparation method of an alignment mark and a preparation method of a fin field effect transistor, and relates to the technical field of semiconductors. The preparation method of the alignment mark comprises the following steps: forming a fin part on a substrate; forming mark reference parts on the fin parts, and forming mark forming regions between the mark reference parts; and forming an alignment mark on the fin part in the mark forming region. The pattern of the alignment mark formed by the preparation method is clearer, the signal intensity and the measurement accuracy can be improved, and the formation of a miniature pattern in a semiconductor manufacturing process is facilitated. The preparation method is also suitable for the manufacturing process of the existing fin field effect transistor, and has a good application prospect. 本发明的实施例提供了一种对准标记的制备方法和鳍式场效应晶体管的制备方法，涉及半导体技术领域。对准标记的制备方法包括：在衬底上形成鳍部；在鳍部上形成标记参照部，标记参照部之间形成标记形成区；在标记形成区的鳍部上形成对准标记。该制备方法形成的对准标记的图形更加清晰，能够