SEMICONDUCTOR DEVICE WITH COMPLEMENTARILY DOPED REGIONS AND METHOD OF MANUFACTURING

A first hard mask (410) is formed on a first surface (101) of a semiconductor body (100), wherein the first openings (411) in the first hard mask (410) expose the first surface sections (601), and the second openings (412) expose the second surface sections (602). Dopants of a first conductivity typ...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	VOERCKEL ANDREAS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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