Cr<3+>-doped near-infrared nano fluorescent powder as well as preparation method and application thereof

The invention provides Cr-doped near-infrared nano fluorescent powder and a preparation method and application thereof. The chemical expression of the fluorescent powder is Ga2-XO3:xCr, wherein x is larger than 0 and smaller than 0.5. The fluorescent powder prepared through the preparation method is...

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Hauptverfasser: LI GEN, CHEN DAODING, LI YUEBIN, PAN HAIZONG, WAN DUANYANG, ZHANG HUAMEI, CAI QIAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides Cr-doped near-infrared nano fluorescent powder and a preparation method and application thereof. The chemical expression of the fluorescent powder is Ga2-XO3:xCr, wherein x is larger than 0 and smaller than 0.5. The fluorescent powder prepared through the preparation method is nano particles, matrix materials are easy to dope, and efficient conversion from blue-violet light to near-infrared light is achieved. The strongest excitation peak of the fluorescent powder is highly coupled with the strongest emission peak of a GaN LED, efficient emission of near-infrared light can be achieved under excitation of blue-violet light of a GaN LED chip, the requirement of a light source of a fresh food decay detection system is highly met, and the fluorescent powder can be applied to the field of nondestructive detection of fresh food. 本发明提供了一种掺杂Cr3+的近红外纳米荧光粉及其制备方法和应用,此荧光粉的化学表达式为:Ga2-XO3:xCr3+,其中,0<x<0.5,此制备方法制得的荧光粉为纳米颗粒,易于掺杂基质材料,实现蓝紫光到近红外光的高效转化;且此荧光粉的最强激发峰与GaN LED最强发射峰高度耦合,在GaN LED芯片蓝紫光的激发下