Metal oxide semiconductor field effect transistor of buried gate channel and manufacturing method thereof

The invention discloses a metal oxide semiconductor field effect transistor of a buried gate channel and a manufacturing method thereof. The metal oxide semiconductor field effect transistor of the buried gate channel comprises a dielectric layer, a gate electrode and a buried gate channel region. T...

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1. Verfasser:	XIONG CHANGBO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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