Semiconductor storage device and forming method thereof

The invention discloses a semiconductor storage device and a forming method thereof. The semiconductor storage device includes a substrate and a capacitor. The capacitor is arranged on the substrate and comprises a bottom electrode layer, a capacitor dielectric layer, a top electrode layer and a first aluminum-containing isolation layer which are sequentially stacked from bottom to top. The first aluminum-containing isolation layer comprises aluminum titanium nitride or aluminum oxynitride, is arranged on the capacitor dielectric layer in a direct contact mode and is located between the bottom electrode layer and the top electrode layer. Therefore, the semiconductor storage device provided by the invention can effectively improve the current leakage problem. 本发明公开了半导体存储装置及其形成方法，其包括衬底以及电容器。电容器设置在衬底上并包括由下而上依序堆叠的底电极层、电容介电层、以及顶电极层，以及第一含铝隔绝层。第一含铝隔绝层包括氮化铝钛或氮氧化铝，直接接触设置电容介电层并位在底电极层以及顶电极层之间。藉此，本发明的半导体存储装置可有效改善漏电流问题。