Organic multiplication photoelectric detector based on modification layer doping and production method thereof

The invention provides an organic multiplication photoelectric detector based on modification layer doping, and relates to the technical field of photoelectric detection. The photoelectric detector comprises a transparent conductive electrode layer, an anode modification layer, an organic functional...

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Bibliographische Detailangaben
Hauptverfasser: FAN QINGSHAN, DOU ZIFAN, HUANG JIANG, HU GANG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides an organic multiplication photoelectric detector based on modification layer doping, and relates to the technical field of photoelectric detection. The photoelectric detector comprises a transparent conductive electrode layer, an anode modification layer, an organic functional layer, a doping modification layer and a metal electrode layer which are sequentially arranged from bottom to top. The method comprises the following steps: cleaning a transparent conductive electrode layer; performing ultraviolet oxidation treatment on the treated transparent conductive electrode layer; spin-coating an anode modification layer on the transparent conductive electrode, and annealing for later use; spin-coating an organic donor-acceptor solution on the anode modification layer to form an organic functional layer, and annealing for later use; spin-coating or evaporating a doped modification layer on the organic functional layer, and annealing for later use; and evaporating a metal electrode on the do