Deep ultraviolet LED chip and manufacturing method thereof

The invention discloses a deep ultraviolet LED chip and a manufacturing method thereof. The deep ultraviolet LED chip comprises a substrate; an epitaxial structure which is located on the substrate and sequentially comprises an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer from bottom to top; and a metal nanowire layer which is located on the P-type semiconductor layer, wherein the metal nanowire layer serves as an ohmic contact layer of the P-type semiconductor layer. According to the deep ultraviolet LED chip, the metal nanowire layer is used as the ohmic contact layer of the P-type semiconductor layer, so that the absorption of the deep ultraviolet light by the internal structure of the deep ultraviolet LED chip is reduced. 本申请公开了一种深紫外LED芯片及其制造方法，该深紫外LED芯片包括：衬底；外延结构，位于衬底上，从下到上依次包括N型半导体层、多量子阱层以及P型半导体层；以及金属纳米线层，位于P型半导体层上，其中，金属纳米线层作为P型半导体层的欧姆接触层。该深紫外LED芯片利用金属纳米线层作为P型半导体层的欧姆接触层，从而减少了深紫外LED芯片内部结构对深紫外光的吸收。