SUBSTRATE PROCESSING APPARATUS

The present invention relates to a substrate processing apparatus, and more particularly, the substrate processing apparatus includes a gas utility exhausting each of the reaction space and the protective space so that a pressure change process including a high-pressure process, which is in a state of a pressure higher than atmospheric pressure, and a low-pressure process that is in a state of a pressure lower than the atmospheric pressure, is performed on a plurality of substrates introduced into the reaction space. 本发明涉及基板处理装置，更详细地说涉及通过高压及低压执行基板处理的基板处理装置。本发明公开了一种基板处理装置，包括：外管，在内部形成有保护空间，并且在下部形成第一入口；内管，在内部形成有反应空间，并且在下部形成第二入口，而且一部分被容纳于所述外管，形成所述第二入口的部分向所述外管下方凸出。