Preparation method of polarity alternating AlN template
The invention provides a preparation method of a polarity alternating AlN template. The preparation method comprises the following steps: depositing nitrogen polarity AlN on the surface of a substrate; depositing a mask layer on the nitrogen polar AlN; patterning the mask layer so as to expose a par...
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| creator | GUO YANAN WANG JUNXI LIU ZHIBIN CAI TINGSONG YAN JIANCHANG |
| description | The invention provides a preparation method of a polarity alternating AlN template. The preparation method comprises the following steps: depositing nitrogen polarity AlN on the surface of a substrate; depositing a mask layer on the nitrogen polar AlN; patterning the mask layer so as to expose a part of the nitrogen polarity AlN; carrying out heat treatment on nitrogen polar AlN, inducing the polarity of the nitrogen polar AlN covered by the mask layer to be reversed, and keeping the polarity of the exposed nitrogen polar AlN unchanged; removing the mask layer to obtain an AlN structure with alternating surface polarities; and continuously depositing AlN on the AlN structure with alternate surface polarities to a preset thickness to obtain the AlN template with alternate polarities.
本公开提供了一种极性交替AlN模板的制备方法，包括：在衬底表面沉积氮极性AlN；在所述氮极性AlN上沉积掩膜层；对所述掩膜层图形化，以暴露部分所述氮极性AlN；对氮极性AlN进行热处理，诱使所述掩膜层覆盖的所述氮极性AlN的极性反转，保持暴露的所述氮极性AlN的极性不变；去除所述掩膜层，得到表面极性交替的AlN结构；在表面极性交替的AlN结构上继续沉积AlN至预设厚度，得到所述极性交替AlN模板。 |
| format | Patent |
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本公开提供了一种极性交替AlN模板的制备方法，包括：在衬底表面沉积氮极性AlN；在所述氮极性AlN上沉积掩膜层；对所述掩膜层图形化，以暴露部分所述氮极性AlN；对氮极性AlN进行热处理，诱使所述掩膜层覆盖的所述氮极性AlN的极性反转，保持暴露的所述氮极性AlN的极性不变；去除所述掩膜层，得到表面极性交替的AlN结构；在表面极性交替的AlN结构上继续沉积AlN至预设厚度，得到所述极性交替AlN模板。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211022&DB=EPODOC&CC=CN&NR=113539791A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211022&DB=EPODOC&CC=CN&NR=113539791A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUO YANAN</creatorcontrib><creatorcontrib>WANG JUNXI</creatorcontrib><creatorcontrib>LIU ZHIBIN</creatorcontrib><creatorcontrib>CAI TINGSONG</creatorcontrib><creatorcontrib>YAN JIANCHANG</creatorcontrib><title>Preparation method of polarity alternating AlN template</title><description>The invention provides a preparation method of a polarity alternating AlN template. The preparation method comprises the following steps: depositing nitrogen polarity AlN on the surface of a substrate; depositing a mask layer on the nitrogen polar AlN; patterning the mask layer so as to expose a part of the nitrogen polarity AlN; carrying out heat treatment on nitrogen polar AlN, inducing the polarity of the nitrogen polar AlN covered by the mask layer to be reversed, and keeping the polarity of the exposed nitrogen polar AlN unchanged; removing the mask layer to obtain an AlN structure with alternating surface polarities; and continuously depositing AlN on the AlN structure with alternate surface polarities to a preset thickness to obtain the AlN template with alternate polarities.
本公开提供了一种极性交替AlN模板的制备方法，包括：在衬底表面沉积氮极性AlN；在所述氮极性AlN上沉积掩膜层；对所述掩膜层图形化，以暴露部分所述氮极性AlN；对氮极性AlN进行热处理，诱使所述掩膜层覆盖的所述氮极性AlN的极性反转，保持暴露的所述氮极性AlN的极性不变；去除所述掩膜层，得到表面极性交替的AlN结构；在表面极性交替的AlN结构上继续沉积AlN至预设厚度，得到所述极性交替AlN模板。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPKEotSCxKLMnMz1PITS3JyE9RyE9TKMjPSSzKLKlUSMwpSS3KA0rnpSs45vgplKTmFuQklqTyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQ2NTY0tzS0NHY2LUAADwry4r</recordid><startdate>20211022</startdate><enddate>20211022</enddate><creator>GUO YANAN</creator><creator>WANG JUNXI</creator><creator>LIU ZHIBIN</creator><creator>CAI TINGSONG</creator><creator>YAN JIANCHANG</creator><scope>EVB</scope></search><sort><creationdate>20211022</creationdate><title>Preparation method of polarity alternating AlN template</title><author>GUO YANAN ; WANG JUNXI ; LIU ZHIBIN ; CAI TINGSONG ; YAN JIANCHANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113539791A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GUO YANAN</creatorcontrib><creatorcontrib>WANG JUNXI</creatorcontrib><creatorcontrib>LIU ZHIBIN</creatorcontrib><creatorcontrib>CAI TINGSONG</creatorcontrib><creatorcontrib>YAN JIANCHANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GUO YANAN</au><au>WANG JUNXI</au><au>LIU ZHIBIN</au><au>CAI TINGSONG</au><au>YAN JIANCHANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of polarity alternating AlN template</title><date>2021-10-22</date><risdate>2021</risdate><abstract>The invention provides a preparation method of a polarity alternating AlN template. The preparation method comprises the following steps: depositing nitrogen polarity AlN on the surface of a substrate; depositing a mask layer on the nitrogen polar AlN; patterning the mask layer so as to expose a part of the nitrogen polarity AlN; carrying out heat treatment on nitrogen polar AlN, inducing the polarity of the nitrogen polar AlN covered by the mask layer to be reversed, and keeping the polarity of the exposed nitrogen polar AlN unchanged; removing the mask layer to obtain an AlN structure with alternating surface polarities; and continuously depositing AlN on the AlN structure with alternate surface polarities to a preset thickness to obtain the AlN template with alternate polarities.
本公开提供了一种极性交替AlN模板的制备方法，包括：在衬底表面沉积氮极性AlN；在所述氮极性AlN上沉积掩膜层；对所述掩膜层图形化，以暴露部分所述氮极性AlN；对氮极性AlN进行热处理，诱使所述掩膜层覆盖的所述氮极性AlN的极性反转，保持暴露的所述氮极性AlN的极性不变；去除所述掩膜层，得到表面极性交替的AlN结构；在表面极性交替的AlN结构上继续沉积AlN至预设厚度，得到所述极性交替AlN模板。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Preparation method of polarity alternating AlN template |
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