Preparation method of AlN film
The invention provides a preparation method of an AlN film. The preparation method comprises the following steps of: providing a substrate; depositing a bottom AlN film layer on the substrate in a sputtering mode, so as to obtain an initial film; and carrying out heat treatment layer preparation tre...
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| creator | GUO YANAN WANG JUNXI LIU ZHIBIN CAI TINGSONG YAN JIANCHANG |
| description | The invention provides a preparation method of an AlN film. The preparation method comprises the following steps of: providing a substrate; depositing a bottom AlN film layer on the substrate in a sputtering mode, so as to obtain an initial film; and carrying out heat treatment layer preparation treatment on the initial film for multiple times, and forming multiple AlN film layers on the initial film until the total thickness of the AlN film layers on the substrate reaches a target value, so as to obtain the AlN film. According to the preparation method of the AlN film of the technical schemes provided by the invention, the AlN film is formed through sputtering deposition, the AlN film is formed through repeated heat treatment layer preparation treatment, the AlN template with higher crystal quality and lower stress is obtained, the preparation process is simple, effective and stable, the cost is low, and industrial application is facilitated.
本发明提供一种AlN薄膜的制备方法，包括以下步骤：提供一衬底；在所述衬底上溅射沉积一层底层AlN薄膜层，得到一初始薄膜；多次对所述初 |
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本发明提供一种AlN薄膜的制备方法，包括以下步骤：提供一衬底；在所述衬底上溅射沉积一层底层AlN薄膜层，得到一初始薄膜；多次对所述初</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210928&DB=EPODOC&CC=CN&NR=113451457A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210928&DB=EPODOC&CC=CN&NR=113451457A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUO YANAN</creatorcontrib><creatorcontrib>WANG JUNXI</creatorcontrib><creatorcontrib>LIU ZHIBIN</creatorcontrib><creatorcontrib>CAI TINGSONG</creatorcontrib><creatorcontrib>YAN JIANCHANG</creatorcontrib><title>Preparation method of AlN film</title><description>The invention provides a preparation method of an AlN film. The preparation method comprises the following steps of: providing a substrate; depositing a bottom AlN film layer on the substrate in a sputtering mode, so as to obtain an initial film; and carrying out heat treatment layer preparation treatment on the initial film for multiple times, and forming multiple AlN film layers on the initial film until the total thickness of the AlN film layers on the substrate reaches a target value, so as to obtain the AlN film. According to the preparation method of the AlN film of the technical schemes provided by the invention, the AlN film is formed through sputtering deposition, the AlN film is formed through repeated heat treatment layer preparation treatment, the AlN template with higher crystal quality and lower stress is obtained, the preparation process is simple, effective and stable, the cost is low, and industrial application is facilitated.
本发明提供一种AlN薄膜的制备方法，包括以下步骤：提供一衬底；在所述衬底上溅射沉积一层底层AlN薄膜层，得到一初始薄膜；多次对所述初</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALKEotSCxKLMnMz1PITS3JyE9RyE9TcMzxU0jLzMnlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhsYmpoYmpuaOxsSoAQDNdyQB</recordid><startdate>20210928</startdate><enddate>20210928</enddate><creator>GUO YANAN</creator><creator>WANG JUNXI</creator><creator>LIU ZHIBIN</creator><creator>CAI TINGSONG</creator><creator>YAN JIANCHANG</creator><scope>EVB</scope></search><sort><creationdate>20210928</creationdate><title>Preparation method of AlN film</title><author>GUO YANAN ; WANG JUNXI ; LIU ZHIBIN ; CAI TINGSONG ; YAN JIANCHANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113451457A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GUO YANAN</creatorcontrib><creatorcontrib>WANG JUNXI</creatorcontrib><creatorcontrib>LIU ZHIBIN</creatorcontrib><creatorcontrib>CAI TINGSONG</creatorcontrib><creatorcontrib>YAN JIANCHANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GUO YANAN</au><au>WANG JUNXI</au><au>LIU ZHIBIN</au><au>CAI TINGSONG</au><au>YAN JIANCHANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of AlN film</title><date>2021-09-28</date><risdate>2021</risdate><abstract>The invention provides a preparation method of an AlN film. The preparation method comprises the following steps of: providing a substrate; depositing a bottom AlN film layer on the substrate in a sputtering mode, so as to obtain an initial film; and carrying out heat treatment layer preparation treatment on the initial film for multiple times, and forming multiple AlN film layers on the initial film until the total thickness of the AlN film layers on the substrate reaches a target value, so as to obtain the AlN film. According to the preparation method of the AlN film of the technical schemes provided by the invention, the AlN film is formed through sputtering deposition, the AlN film is formed through repeated heat treatment layer preparation treatment, the AlN template with higher crystal quality and lower stress is obtained, the preparation process is simple, effective and stable, the cost is low, and industrial application is facilitated.
本发明提供一种AlN薄膜的制备方法，包括以下步骤：提供一衬底；在所述衬底上溅射沉积一层底层AlN薄膜层，得到一初始薄膜；多次对所述初</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Preparation method of AlN film |
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