Precisely-controlled semiconductor device and method for curing dielectric material
The invention relates to the technical field of semiconductor manufacturing and packaging, and provides a semiconductor device for precisely controlling and curing a dielectric material. The device comprises a wafer placing rack; a wafer table tray; and a low-pressure curing wafer chamber and the li...
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| creator | YAO DAPING |
| description | The invention relates to the technical field of semiconductor manufacturing and packaging, and provides a semiconductor device for precisely controlling and curing a dielectric material. The device comprises a wafer placing rack; a wafer table tray; and a low-pressure curing wafer chamber and the like. The invention further provides a process method for curing the dielectric material by using the device for precisely controlling the curing treatment of the dielectric material. According to the invention, the back surface of the wafer is in a pressure reduction state, is in close contact with the wafer table tray, and is heated in a low-pressure state, so that the wafer and the dielectric material coating are uniformly heated or cooled in a power-off state, and therefore, the dielectric material is uniformly shrunk when being heated and cured at low pressure, the stress is reduced, the performance of the cured dielectric material is improved, and meanwhile, the warping degree of the wafer is greatly reduced.
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| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113436994A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113436994A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113436994A3</originalsourceid><addsrcrecordid>eNqNir0KwkAQBq-xEPUd1gdIERKElBIUKxG0D8feF124n7B3EXx7U_gAVsMMszb3m4Ilw38qTrFo8h6OMoIs6mYuScnhLQyy0VFAeSVH41J5VolPcgIPLipMwRaoWL81q9H6jN2PG7M_nx79pcKUBuTJMiLK0F_rummbQ9e1x-af5wvDpTk2</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Precisely-controlled semiconductor device and method for curing dielectric material</title><source>esp@cenet</source><creator>YAO DAPING</creator><creatorcontrib>YAO DAPING</creatorcontrib><description>The invention relates to the technical field of semiconductor manufacturing and packaging, and provides a semiconductor device for precisely controlling and curing a dielectric material. The device comprises a wafer placing rack; a wafer table tray; and a low-pressure curing wafer chamber and the like. The invention further provides a process method for curing the dielectric material by using the device for precisely controlling the curing treatment of the dielectric material. According to the invention, the back surface of the wafer is in a pressure reduction state, is in close contact with the wafer table tray, and is heated in a low-pressure state, so that the wafer and the dielectric material coating are uniformly heated or cooled in a power-off state, and therefore, the dielectric material is uniformly shrunk when being heated and cured at low pressure, the stress is reduced, the performance of the cured dielectric material is improved, and meanwhile, the warping degree of the wafer is greatly reduced.
本</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210924&DB=EPODOC&CC=CN&NR=113436994A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210924&DB=EPODOC&CC=CN&NR=113436994A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAO DAPING</creatorcontrib><title>Precisely-controlled semiconductor device and method for curing dielectric material</title><description>The invention relates to the technical field of semiconductor manufacturing and packaging, and provides a semiconductor device for precisely controlling and curing a dielectric material. The device comprises a wafer placing rack; a wafer table tray; and a low-pressure curing wafer chamber and the like. The invention further provides a process method for curing the dielectric material by using the device for precisely controlling the curing treatment of the dielectric material. According to the invention, the back surface of the wafer is in a pressure reduction state, is in close contact with the wafer table tray, and is heated in a low-pressure state, so that the wafer and the dielectric material coating are uniformly heated or cooled in a power-off state, and therefore, the dielectric material is uniformly shrunk when being heated and cured at low pressure, the stress is reduced, the performance of the cured dielectric material is improved, and meanwhile, the warping degree of the wafer is greatly reduced.
本</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNir0KwkAQBq-xEPUd1gdIERKElBIUKxG0D8feF124n7B3EXx7U_gAVsMMszb3m4Ilw38qTrFo8h6OMoIs6mYuScnhLQyy0VFAeSVH41J5VolPcgIPLipMwRaoWL81q9H6jN2PG7M_nx79pcKUBuTJMiLK0F_rummbQ9e1x-af5wvDpTk2</recordid><startdate>20210924</startdate><enddate>20210924</enddate><creator>YAO DAPING</creator><scope>EVB</scope></search><sort><creationdate>20210924</creationdate><title>Precisely-controlled semiconductor device and method for curing dielectric material</title><author>YAO DAPING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113436994A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAO DAPING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAO DAPING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Precisely-controlled semiconductor device and method for curing dielectric material</title><date>2021-09-24</date><risdate>2021</risdate><abstract>The invention relates to the technical field of semiconductor manufacturing and packaging, and provides a semiconductor device for precisely controlling and curing a dielectric material. The device comprises a wafer placing rack; a wafer table tray; and a low-pressure curing wafer chamber and the like. The invention further provides a process method for curing the dielectric material by using the device for precisely controlling the curing treatment of the dielectric material. According to the invention, the back surface of the wafer is in a pressure reduction state, is in close contact with the wafer table tray, and is heated in a low-pressure state, so that the wafer and the dielectric material coating are uniformly heated or cooled in a power-off state, and therefore, the dielectric material is uniformly shrunk when being heated and cured at low pressure, the stress is reduced, the performance of the cured dielectric material is improved, and meanwhile, the warping degree of the wafer is greatly reduced.
本</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Precisely-controlled semiconductor device and method for curing dielectric material |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T16%3A26%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAO%20DAPING&rft.date=2021-09-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN113436994A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |