Heat dissipation substrate for gallium nitride-based device and preparation method of heat dissipation substrate
The invention discloses a heat dissipation substrate for a gallium nitride-based device and a preparation method of the heat dissipation substrate. The core of the heat dissipation substrate is a periodic Van der Waals structure composed of gallium nitride and graphene. On one hand, a graphene mater...
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| creator | LU YAN QIN JIAYI LUO MAN YU CHENHUI SHEN NIMING |
| description | The invention discloses a heat dissipation substrate for a gallium nitride-based device and a preparation method of the heat dissipation substrate. The core of the heat dissipation substrate is a periodic Van der Waals structure composed of gallium nitride and graphene. On one hand, a graphene material with a high heat conductivity coefficient is applied to the heat dissipation substrate, and the problems that a traditional substrate is poor in heat dissipation effect and the like are solved; and on the other hand, the heat dissipation substrate is prepared by adopting a dry transfer technology and a remote epitaxy technology. Compared with a heat dissipation substrate grown by using a traditional epitaxial technology, the heat dissipation substrate disclosed by the invention not only has the general performance of the traditional heat dissipation substrate, but also saves the production cost, enhances the heat dissipation effect, and is more suitable for being applied to an industrial scale.
本发明公开了一种氮化镓基器件用散 |
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本发明公开了一种氮化镓基器件用散</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEOgkAQBWksjPoP6wdQIGpoDdFQWdmThXvIJnB3uV38fgttTaymmZl1FhuwkRNViWwSPOnSqSU20BASPXmaZJnJiyVxyDtWOHJ4SQ9i7ygmRE6fdIaNwVEYaPx53WargSfF7stNtr9dH3WTI4YWGrmHh7X1vSjK46GozqdL-Y_zBrTCRAw</recordid><startdate>20210921</startdate><enddate>20210921</enddate><creator>LU YAN</creator><creator>QIN JIAYI</creator><creator>LUO MAN</creator><creator>YU CHENHUI</creator><creator>SHEN NIMING</creator><scope>EVB</scope></search><sort><creationdate>20210921</creationdate><title>Heat dissipation substrate for gallium nitride-based device and preparation method of heat dissipation substrate</title><author>LU YAN ; QIN JIAYI ; LUO MAN ; YU CHENHUI ; SHEN NIMING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113421865A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LU YAN</creatorcontrib><creatorcontrib>QIN JIAYI</creatorcontrib><creatorcontrib>LUO MAN</creatorcontrib><creatorcontrib>YU CHENHUI</creatorcontrib><creatorcontrib>SHEN NIMING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LU YAN</au><au>QIN JIAYI</au><au>LUO MAN</au><au>YU CHENHUI</au><au>SHEN NIMING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Heat dissipation substrate for gallium nitride-based device and preparation method of heat dissipation substrate</title><date>2021-09-21</date><risdate>2021</risdate><abstract>The invention discloses a heat dissipation substrate for a gallium nitride-based device and a preparation method of the heat dissipation substrate. The core of the heat dissipation substrate is a periodic Van der Waals structure composed of gallium nitride and graphene. On one hand, a graphene material with a high heat conductivity coefficient is applied to the heat dissipation substrate, and the problems that a traditional substrate is poor in heat dissipation effect and the like are solved; and on the other hand, the heat dissipation substrate is prepared by adopting a dry transfer technology and a remote epitaxy technology. Compared with a heat dissipation substrate grown by using a traditional epitaxial technology, the heat dissipation substrate disclosed by the invention not only has the general performance of the traditional heat dissipation substrate, but also saves the production cost, enhances the heat dissipation effect, and is more suitable for being applied to an industrial scale.
本发明公开了一种氮化镓基器件用散</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Heat dissipation substrate for gallium nitride-based device and preparation method of heat dissipation substrate |
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