Preparation process of silicon substrate on power insulator

Preparation process of silicon substrate on power insulator

The invention relates to a preparation process of a silicon substrate on a power insulator. The preparation process comprises the following steps: preparing a silicon epitaxial wafer as a device layer silicon substrate and an oxidized silicon wafer as a supporting silicon substrate, performing plasm...

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Hauptverfasser: SUN CHENGUANG, MA QIANZHI, WANG YANJUN
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SUN CHENGUANG
MA QIANZHI
WANG YANJUN
description The invention relates to a preparation process of a silicon substrate on a power insulator. The preparation process comprises the following steps: preparing a silicon epitaxial wafer as a device layer silicon substrate and an oxidized silicon wafer as a supporting silicon substrate, performing plasma surface activation treatment, performing low-temperature annealing after normal-temperature bonding, and performing low-temperature annealing after adopting a mechanical grinding thinning mode, removing a silicon single crystal of the substrate by using two-step selective acid corrosion of fast corrosion and slow corrosion, carrying out CMP polishing treatment, then carrying out high-temperature oxidation thinning treatment, and finally removing silicon oxide grown by high-temperature oxidation through diluted hydrofluoric acid corrosion; enabling the low-temperature annealing temperature after bonding to not exceed 400 DEG C; and enabling the polishing removal amount of the bonding wafer to not exceed 1 micron a
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Preparation process of silicon substrate on power insulator
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