Alkysulfonyloximes for high-resolution I-line hpotoresists of high sensitivity
本发明公开了式1肟烷基磺酸酯化合物作为光敏酸产生体在可用碱性介质显影且对波长为340-390纳米的射线敏感的化学放大性光致抗蚀剂以及对上述波长范围适用的相应组成的正型和负型光致抗蚀剂中的应用：其中R代表萘基，(2)或(3)；R#-[0]代表R#-[1]-X基团或R#-[2]；X代表直接连键，氧原子或硫原子；R#-[1]代表氢，C#-[1]-C#-[4]烷基或未取代的或被选自氯、溴、C#-[1]-C#-[4]烷基和C#-[1]-C#-[4]烷氧基的取代基所取代的苯基；R#-[2]代表氢或C#-[1]-C#-[4]烷基；且R#-[3]代表直链或支链C#-[1]-C#-[12]烷基，该烷基为未取代的...
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| creator | K. DIETLIKER H. YAMATO M. KUNZ |
| description | 本发明公开了式1肟烷基磺酸酯化合物作为光敏酸产生体在可用碱性介质显影且对波长为340-390纳米的射线敏感的化学放大性光致抗蚀剂以及对上述波长范围适用的相应组成的正型和负型光致抗蚀剂中的应用：其中R代表萘基，(2)或(3)；R#-[0]代表R#-[1]-X基团或R#-[2]；X代表直接连键，氧原子或硫原子；R#-[1]代表氢，C#-[1]-C#-[4]烷基或未取代的或被选自氯、溴、C#-[1]-C#-[4]烷基和C#-[1]-C#-[4]烷氧基的取代基所取代的苯基；R#-[2]代表氢或C#-[1]-C#-[4]烷基；且R#-[3]代表直链或支链C#-[1]-C#-[12]烷基，该烷基为未取代的或被一个或多个卤原子取代。∴
The invention describes the use of oxime alkyl sulfonate compounds of formula (1), wherein R is naphthyl, (2) or (3); R0 is either an R1-X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosentisitve acid generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range. |
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The invention describes the use of oxime alkyl sulfonate compounds of formula (1), wherein R is naphthyl, (2) or (3); R0 is either an R1-X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosentisitve acid generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range.</description><edition>7</edition><language>chi ; eng</language><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS ; APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HETEROCYCLIC COMPOUNDS ; HOLOGRAPHIC PROCESSES OR APPARATUS ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; ORGANIC CHEMISTRY ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040107&DB=EPODOC&CC=CN&NR=1133901C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040107&DB=EPODOC&CC=CN&NR=1133901C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>K. DIETLIKER</creatorcontrib><creatorcontrib>H. YAMATO</creatorcontrib><creatorcontrib>M. KUNZ</creatorcontrib><title>Alkysulfonyloximes for high-resolution I-line hpotoresists of high sensitivity</title><description>本发明公开了式1肟烷基磺酸酯化合物作为光敏酸产生体在可用碱性介质显影且对波长为340-390纳米的射线敏感的化学放大性光致抗蚀剂以及对上述波长范围适用的相应组成的正型和负型光致抗蚀剂中的应用：其中R代表萘基，(2)或(3)；R#-[0]代表R#-[1]-X基团或R#-[2]；X代表直接连键，氧原子或硫原子；R#-[1]代表氢，C#-[1]-C#-[4]烷基或未取代的或被选自氯、溴、C#-[1]-C#-[4]烷基和C#-[1]-C#-[4]烷氧基的取代基所取代的苯基；R#-[2]代表氢或C#-[1]-C#-[4]烷基；且R#-[3]代表直链或支链C#-[1]-C#-[12]烷基，该烷基为未取代的或被一个或多个卤原子取代。∴
The invention describes the use of oxime alkyl sulfonate compounds of formula (1), wherein R is naphthyl, (2) or (3); R0 is either an R1-X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosentisitve acid generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range.</description><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HETEROCYCLIC COMPOUNDS</subject><subject>HOLOGRAPHIC PROCESSES OR APPARATUS</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>ORGANIC CHEMISTRY</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEKAjEQQNE0FqLeYS4QMKSylKBos5X9ssjEDI6ZZWdWzO0V8QBWHz5v6bo935vOnKU2lhc9UCHLBIVuxU-owrORVDh7popQRjH5bFJTkPxloFiVjJ5kbe0WeWDFza8rB8fDJZ08jtKjjsMVK1qfuhBi3G1DSvEP8gZGBDdg</recordid><startdate>20040107</startdate><enddate>20040107</enddate><creator>K. DIETLIKER</creator><creator>H. YAMATO</creator><creator>M. KUNZ</creator><scope>EVB</scope></search><sort><creationdate>20040107</creationdate><title>Alkysulfonyloximes for high-resolution I-line hpotoresists of high sensitivity</title><author>K. DIETLIKER ; H. YAMATO ; M. KUNZ</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1133901CC3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2004</creationdate><topic>ACYCLIC OR CARBOCYCLIC COMPOUNDS</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HETEROCYCLIC COMPOUNDS</topic><topic>HOLOGRAPHIC PROCESSES OR APPARATUS</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>ORGANIC CHEMISTRY</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>K. DIETLIKER</creatorcontrib><creatorcontrib>H. YAMATO</creatorcontrib><creatorcontrib>M. KUNZ</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>K. DIETLIKER</au><au>H. YAMATO</au><au>M. KUNZ</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Alkysulfonyloximes for high-resolution I-line hpotoresists of high sensitivity</title><date>2004-01-07</date><risdate>2004</risdate><abstract>本发明公开了式1肟烷基磺酸酯化合物作为光敏酸产生体在可用碱性介质显影且对波长为340-390纳米的射线敏感的化学放大性光致抗蚀剂以及对上述波长范围适用的相应组成的正型和负型光致抗蚀剂中的应用：其中R代表萘基，(2)或(3)；R#-[0]代表R#-[1]-X基团或R#-[2]；X代表直接连键，氧原子或硫原子；R#-[1]代表氢，C#-[1]-C#-[4]烷基或未取代的或被选自氯、溴、C#-[1]-C#-[4]烷基和C#-[1]-C#-[4]烷氧基的取代基所取代的苯基；R#-[2]代表氢或C#-[1]-C#-[4]烷基；且R#-[3]代表直链或支链C#-[1]-C#-[12]烷基，该烷基为未取代的或被一个或多个卤原子取代。∴
The invention describes the use of oxime alkyl sulfonate compounds of formula (1), wherein R is naphthyl, (2) or (3); R0 is either an R1-X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosentisitve acid generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC OR CARBOCYCLIC COMPOUNDS APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HETEROCYCLIC COMPOUNDS HOLOGRAPHIC PROCESSES OR APPARATUS HOLOGRAPHY MATERIALS THEREFOR METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORGANIC CHEMISTRY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Alkysulfonyloximes for high-resolution I-line hpotoresists of high sensitivity |
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