Vertical structure LED chip and manufacturing method thereof

The invention discloses a vertical structure LED chip and a manufacturing method thereof. The vertical structure LED chip comprises a bonding substrate; a first electrode layer attached to the surface of the first side of the bonding substrate; a metal bonding layer attached to the surface of the se...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FAN WEIHONG, GUO MAOFENG, BI JINGFENG, SHI SHIMAN, ZHAO JINCHAO, LI SHITAO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a vertical structure LED chip and a manufacturing method thereof. The vertical structure LED chip comprises a bonding substrate; a first electrode layer attached to the surface of the first side of the bonding substrate; a metal bonding layer attached to the surface of the second side of the bonding substrate; a reflecting mirror layer located on the surface of the side, away from the bonding substrate, of the metal bonding layer; a P-type ohmic contact layer stacked on the surface of the side, away from the bonding substrate, of the reflecting mirror layer; an epitaxial layer which comprises a second semiconductor layer, a carrier barrier layer, a multi-quantum well layer and a first semiconductor layer sequentially stacked on the surface of the side, away from the reflector layer, of the P-type ohmic contact layer; and a second electrode layer located on the side, away from the bonding substrate, of the reflecting mirror layer and is opposite to the first electrode layer. A light ext