Semiconductor device and forming method thereof

A method includes forming a first conductive part; depositing a passivation layer on sidewalls and a top surface of the first conductive part; etching the passivation layer to expose the first conductive part; and recessing the first top surface of the passivation layer to form a step. The step includes a second top surface of the passivation layer. The method further includes forming a planarization layer on the passivation layer; and forming a second conductive part extending into the passivation layer to contact the first conductive part. The embodiment of the invention also relates to a semiconductor device and a forming method thereof. 一种方法包括形成第一导电部件；在第一导电部件的侧壁和顶面上沉积钝化层；蚀刻钝化层以露出第一导电部件；以及使钝化层的第一顶面凹进以形成阶梯。阶梯包括钝化层的第二顶面。该方法还包括在钝化层上形成平坦化层；以及形成延伸至钝化层中以接触第一导电部件的第二导电部件。本发明的实施例还涉及半导体器件及其形成方法。