P-type organic thin film transistor based on molybdenum trioxide contact doping and preparation method thereof

The invention discloses a P-type organic thin film transistor based on molybdenum trioxide contact doping and a preparation method thereof. The P-type organic thin film transistor is provided with a top gate bottom contact structure. The preparation method comprises the following steps: firstly, a layer of gold is prepared on an insulating substrate through a mask plateso as to obtain a source and drain electrode; then a layer of molybdenum trioxide is prepared on the gold electrode so as to obtain a contact doping layer; then a P-type organic semiconductor active layer is formed on the surface of a sample with the prepared electrode through a sol-gel method; the active layer is spin-coated with a layer of a dielectric material to obtain an insulating layer; and finally, an aluminum gate electrode prepared on the surface of the insulating layer through the mask. Compared with a traditional organic thin film transistor, the molybdenum trioxide contact doped organic thin film transistor prepared by the method h