Flexible artificial synaptic device and production method thereof
The invention belongs to the technical field of artificial synaptic devices. The invention provides a flexible artificial synaptic device and a production method thereof. The flexible artificial synaptic device comprises a substrate, a bottom electrode and a top electrode, and a tungsten oxide film...
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| creator | LIU ZHIGANG YAO DIJIE HU SONGCHENG TANG ZHENHUA ZHANG LI |
| description | The invention belongs to the technical field of artificial synaptic devices. The invention provides a flexible artificial synaptic device and a production method thereof. The flexible artificial synaptic device comprises a substrate, a bottom electrode and a top electrode, and a tungsten oxide film is deposited on the bottom electrode. The flexible artificial synapse device not only has the resistance change characteristic of a memristor, but also can realize similar functions of biological synapses, including double-pulse facilitation (PPF), long-term enhancement (LTP), pulse time dependent plasticity (STDP), pulse frequency dependent plasticity (STRP) and the like, and has the advantages of low power consumption, fast response and strong tolerance. The device can be used for constructing an artificial neural network system, and a feasible way is provided for realizing a wearable neural morphology computing system.
本申请属于人工突触器件技术领域。本申请提供了一种柔性人工突触器件及其制备方法。柔性人工突触器件包括基片、底电极和顶电级；所述底电极上沉积有氧化钨薄膜。本申请的柔性人工突触器件不但具有忆阻器 |
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本申请属于人工突触器件技术领域。本申请提供了一种柔性人工突触器件及其制备方法。柔性人工突触器件包括基片、底电极和顶电级；所述底电极上沉积有氧化钨薄膜。本申请的柔性人工突触器件不但具有忆阻器</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS ; COMPUTING ; COUNTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210723&DB=EPODOC&CC=CN&NR=113161481A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210723&DB=EPODOC&CC=CN&NR=113161481A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU ZHIGANG</creatorcontrib><creatorcontrib>YAO DIJIE</creatorcontrib><creatorcontrib>HU SONGCHENG</creatorcontrib><creatorcontrib>TANG ZHENHUA</creatorcontrib><creatorcontrib>ZHANG LI</creatorcontrib><title>Flexible artificial synaptic device and production method thereof</title><description>The invention belongs to the technical field of artificial synaptic devices. The invention provides a flexible artificial synaptic device and a production method thereof. The flexible artificial synaptic device comprises a substrate, a bottom electrode and a top electrode, and a tungsten oxide film is deposited on the bottom electrode. The flexible artificial synapse device not only has the resistance change characteristic of a memristor, but also can realize similar functions of biological synapses, including double-pulse facilitation (PPF), long-term enhancement (LTP), pulse time dependent plasticity (STDP), pulse frequency dependent plasticity (STRP) and the like, and has the advantages of low power consumption, fast response and strong tolerance. The device can be used for constructing an artificial neural network system, and a feasible way is provided for realizing a wearable neural morphology computing system.
本申请属于人工突触器件技术领域。本申请提供了一种柔性人工突触器件及其制备方法。柔性人工突触器件包括基片、底电极和顶电级；所述底电极上沉积有氧化钨薄膜。本申请的柔性人工突触器件不但具有忆阻器</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB0y0mtyEzKSVVILCrJTMtMzkzMUSiuzEssKMlMVkhJLctMBkrlpSgUFOWnlCaXZObnKeSmlmTkpyiUZKQWpean8TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_Q0NjQzNDEwtDR2Ni1AAAMXcyAg</recordid><startdate>20210723</startdate><enddate>20210723</enddate><creator>LIU ZHIGANG</creator><creator>YAO DIJIE</creator><creator>HU SONGCHENG</creator><creator>TANG ZHENHUA</creator><creator>ZHANG LI</creator><scope>EVB</scope></search><sort><creationdate>20210723</creationdate><title>Flexible artificial synaptic device and production method thereof</title><author>LIU ZHIGANG ; YAO DIJIE ; HU SONGCHENG ; TANG ZHENHUA ; ZHANG LI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113161481A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU ZHIGANG</creatorcontrib><creatorcontrib>YAO DIJIE</creatorcontrib><creatorcontrib>HU SONGCHENG</creatorcontrib><creatorcontrib>TANG ZHENHUA</creatorcontrib><creatorcontrib>ZHANG LI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU ZHIGANG</au><au>YAO DIJIE</au><au>HU SONGCHENG</au><au>TANG ZHENHUA</au><au>ZHANG LI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Flexible artificial synaptic device and production method thereof</title><date>2021-07-23</date><risdate>2021</risdate><abstract>The invention belongs to the technical field of artificial synaptic devices. The invention provides a flexible artificial synaptic device and a production method thereof. The flexible artificial synaptic device comprises a substrate, a bottom electrode and a top electrode, and a tungsten oxide film is deposited on the bottom electrode. The flexible artificial synapse device not only has the resistance change characteristic of a memristor, but also can realize similar functions of biological synapses, including double-pulse facilitation (PPF), long-term enhancement (LTP), pulse time dependent plasticity (STDP), pulse frequency dependent plasticity (STRP) and the like, and has the advantages of low power consumption, fast response and strong tolerance. The device can be used for constructing an artificial neural network system, and a feasible way is provided for realizing a wearable neural morphology computing system.
本申请属于人工突触器件技术领域。本申请提供了一种柔性人工突触器件及其制备方法。柔性人工突触器件包括基片、底电极和顶电级；所述底电极上沉积有氧化钨薄膜。本申请的柔性人工突触器件不但具有忆阻器</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES |
| title | Flexible artificial synaptic device and production method thereof |
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