Method of forming a silicon-carbide device with a shielded gate

Disclosed is a method of forming a silicon-carbide device with a shielded gate. The silicon-carbide semiconductor substrate has a plurality of first doped regions being laterally spaced apart from one another and beneath a main surface, and a second doped region extending from the main surface to a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BERGNER WOLFGANG, KUECK DANIEL, ESTEVE ROMAIN, SIEMIENIEC RALF, PETERS DANNY, AICHINGER THOMAS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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