INTEGRATED ASSEMBLIES HAVING FERROELECTRIC TRANSISTORS WITH HETEROSTRUCTURE ACTIVE REGIONS

Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region, and a body region between the first and second source/drain regions. The body region has a different semiconductor composition than at least one of th...

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Bibliographische Detailangaben

Hauptverfasser:	RAMASWAMY DURAL VISHAK NIRMAL, LIU HAITAO, KARDA KAMAL M
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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