INTEGRATED ASSEMBLIES HAVING FERROELECTRIC TRANSISTORS WITH HETEROSTRUCTURE ACTIVE REGIONS

Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region, and a body region between the first and second source/drain regions. The body region has a different semiconductor composition than at least one of the first and second source/drain regions to enable replenishment of carrier within the body region. An insulative material is along the body region. A ferroelectric material is along the insulative material. A conductive gate material is along the ferroelectric material. 一些实施例包含一种铁电晶体管，其具有有源区，所述有源区包含第一源极/漏极区、第二源极/漏极区及介于所述第一源极/漏极区与所述第二源极/漏极区之间的本体区。所述本体区具有与所述第一源极/漏极区及所述第二源极/漏极区中的至少一者不同的半导体组合物以实现所述本体区内的载子补充。绝缘材料是沿着所述本体区。铁电材料是沿着所述绝缘材料。导电栅极材料是沿着所述铁电材料。