SEMICONDUCTOR STRESS SENSOR

The invention discloses a semiconductor stress sensor. A piezo-resistor sensor (100) comprising: a diffusion (104) of a first conductivity type in a well (118) of an opposite second type, contacts (114) with islands (110) in the diffusion, interconnects (112) with the contacts, a shield (108) covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts, each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, each island is at a side covered by its interconnect,a guard ring (102) of the second type around the diffusion, the shield covers the well between the diffusion and the ring, and the edge of the ring facing the diffusion, if a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects. 本申请公开了半导体应力传感器。一种压电电阻传感器(100)，包括：第二类型的阱(118)中的相对的第一导电类型的扩散件(104)；与该扩散件中的岛(110)的接触件(114)；