MEMORY DEVICE

The invention discloses a memory device, including a substrate, a first digit line, a first capacitor and a metal shield. The substrate has a plurality of active areas and an isolation area. The first digit line and the first capacitor are connected to a first active area of the active areas. The second digit line is connected to a second active area of the active areas. The metal shield is located on the insolation area and between the first digit line and the second digit line. The metal shield is electrically insulated with the first digit line and the second digit line. Therefore, the stray capacitance in the memory device is reduced due to the arrangement of the metal baffle plate. 本发明公开了一种存储器装置，包含基板、第一数位线、第一电容、第二数位线与金属挡板。基板具有多个主动区与隔离区。第一数位线与第一电容连接多个主动区中的第一主动区。第二数位线连接多个主动区中的第二主动区。金属挡板设置于隔离区上，并位于第一数位线与第二数位线之间。金属挡板电性绝缘于第一数位线与第二数位线。如此一来，本发明的存储器装置内的寄生电容由于金属挡板的设置而减少。