Etching liquid composition not containing phosphoric acid and method for forming metal wiring by using etching liquid composition
The invention discloses an etching liquid composition which does not contain phosphoric acid and is used in organic light emitting diode (OLED) pixel manufacturing, and a metal wiring forming method using the etching liquid composition. Specifically, the present invention relates to the etching liqu...
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| creator | LEE SANG-HYUK KIM GYU-PO SHIN HYUNOL LEE DAE-WOO |
| description | The invention discloses an etching liquid composition which does not contain phosphoric acid and is used in organic light emitting diode (OLED) pixel manufacturing, and a metal wiring forming method using the etching liquid composition. Specifically, the present invention relates to the etching liquid composition for forming the metal wiring by etching a metal film into a specific pattern in a manufacturing process of the metal wiring. The etching liquid composition comprises 40 to 60 wt% of a carboxyl compound, 1 to 4.9 wt% of a sulfonic acid compound, 10 to 20 wt% of a nitrate compound, 0.1 to 1 wt% of an azole compound, and the balance of water.
本发明公开一种在有机发光二极管(OLED)像素制造中使用的不包含磷酸的蚀刻液组合物以及利用上述蚀刻液组合物的金属布线形成方法。具体来讲，涉及一种通过在金属布线的制造工程中将金属膜蚀刻成特定图案而形成金属布线的蚀刻液组合物。上述蚀刻液组合物包含：羧基化合物40至60重量％、磺酸化合物1至4.9重量％、硝酸盐化合物10至20重量％、唑类化合物0.1至1重量％、以及余量的水。 |
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本发明公开一种在有机发光二极管(OLED)像素制造中使用的不包含磷酸的蚀刻液组合物以及利用上述蚀刻液组合物的金属布线形成方法。具体来讲，涉及一种通过在金属布线的制造工程中将金属膜蚀刻成特定图案而形成金属布线的蚀刻液组合物。上述蚀刻液组合物包含：羧基化合物40至60重量％、磺酸化合物1至4.9重量％、硝酸盐化合物10至20重量％、唑类化合物0.1至1重量％、以及余量的水。</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210528&DB=EPODOC&CC=CN&NR=112853357A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210528&DB=EPODOC&CC=CN&NR=112853357A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE SANG-HYUK</creatorcontrib><creatorcontrib>KIM GYU-PO</creatorcontrib><creatorcontrib>SHIN HYUNOL</creatorcontrib><creatorcontrib>LEE DAE-WOO</creatorcontrib><title>Etching liquid composition not containing phosphoric acid and method for forming metal wiring by using etching liquid composition</title><description>The invention discloses an etching liquid composition which does not contain phosphoric acid and is used in organic light emitting diode (OLED) pixel manufacturing, and a metal wiring forming method using the etching liquid composition. Specifically, the present invention relates to the etching liquid composition for forming the metal wiring by etching a metal film into a specific pattern in a manufacturing process of the metal wiring. The etching liquid composition comprises 40 to 60 wt% of a carboxyl compound, 1 to 4.9 wt% of a sulfonic acid compound, 10 to 20 wt% of a nitrate compound, 0.1 to 1 wt% of an azole compound, and the balance of water.
本发明公开一种在有机发光二极管(OLED)像素制造中使用的不包含磷酸的蚀刻液组合物以及利用上述蚀刻液组合物的金属布线形成方法。具体来讲，涉及一种通过在金属布线的制造工程中将金属膜蚀刻成特定图案而形成金属布线的蚀刻液组合物。上述蚀刻液组合物包含：羧基化合物40至60重量％、磺酸化合物1至4.9重量％、硝酸盐化合物10至20重量％、唑类化合物0.1至1重量％、以及余量的水。</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjb0KwjAUhbM4iPoO1wdwqKXoWkrFycm9xPTWXEjvjU2KOPrmJuAqOBzODx-cpXq30VjiOzh6zNSDkdFLoEjCwBJT56iJM-GthKSJDGiTUM09jBit9DDIlDVmLE3awZOmXG4vmEMO-PNmrRaDdgE3X1-p7am9NucdeukweG2QMXbNpSj2x6osq0Nd_sN8AA2fSoY</recordid><startdate>20210528</startdate><enddate>20210528</enddate><creator>LEE SANG-HYUK</creator><creator>KIM GYU-PO</creator><creator>SHIN HYUNOL</creator><creator>LEE DAE-WOO</creator><scope>EVB</scope></search><sort><creationdate>20210528</creationdate><title>Etching liquid composition not containing phosphoric acid and method for forming metal wiring by using etching liquid composition</title><author>LEE SANG-HYUK ; KIM GYU-PO ; SHIN HYUNOL ; LEE DAE-WOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN112853357A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE SANG-HYUK</creatorcontrib><creatorcontrib>KIM GYU-PO</creatorcontrib><creatorcontrib>SHIN HYUNOL</creatorcontrib><creatorcontrib>LEE DAE-WOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE SANG-HYUK</au><au>KIM GYU-PO</au><au>SHIN HYUNOL</au><au>LEE DAE-WOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etching liquid composition not containing phosphoric acid and method for forming metal wiring by using etching liquid composition</title><date>2021-05-28</date><risdate>2021</risdate><abstract>The invention discloses an etching liquid composition which does not contain phosphoric acid and is used in organic light emitting diode (OLED) pixel manufacturing, and a metal wiring forming method using the etching liquid composition. Specifically, the present invention relates to the etching liquid composition for forming the metal wiring by etching a metal film into a specific pattern in a manufacturing process of the metal wiring. The etching liquid composition comprises 40 to 60 wt% of a carboxyl compound, 1 to 4.9 wt% of a sulfonic acid compound, 10 to 20 wt% of a nitrate compound, 0.1 to 1 wt% of an azole compound, and the balance of water.
本发明公开一种在有机发光二极管(OLED)像素制造中使用的不包含磷酸的蚀刻液组合物以及利用上述蚀刻液组合物的金属布线形成方法。具体来讲，涉及一种通过在金属布线的制造工程中将金属膜蚀刻成特定图案而形成金属布线的蚀刻液组合物。上述蚀刻液组合物包含：羧基化合物40至60重量％、磺酸化合物1至4.9重量％、硝酸盐化合物10至20重量％、唑类化合物0.1至1重量％、以及余量的水。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
| title | Etching liquid composition not containing phosphoric acid and method for forming metal wiring by using etching liquid composition |
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