METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE
In one embodiment, a method is used for producing optoelectronic semiconductor devices (1) and comprises the steps of providing a light-emitting diode chip (2) and a phosphor body (3); applying a sacrificial layer (4) to a top side (30) of the phosphor body (3) only; placing the phosphor body (3) on...
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| creator | TAN LAY TENG LIANG YUAN PEE HUI YING TEOH HUI CHIANG BOON MEI SEE LIU TIM LIM ALEX KHENG HOOI WONG WING YEW ALIAS ASLIZA |
| description | In one embodiment, a method is used for producing optoelectronic semiconductor devices (1) and comprises the steps of providing a light-emitting diode chip (2) and a phosphor body (3); applying a sacrificial layer (4) to a top side (30) of the phosphor body (3) only; placing the phosphor body (3) onto the light-emitting diode chip (2); molding an encapsulation body (5) directly around the light-emitting diode chip (2) and the phosphor body (3) by means of film assisted molding, wherein at some places, the top face (40) of the sacrificial layer (4) facing away from the phosphor body (3), remains unsealed with a molding film (61); and removing the sacrificial layer (4), so that the top side (30) of the phosphor body (3) becomes free of the sacrificial layer (4).
在一个实施例中，该方法用于生产光电半导体器件（1），并且包括以下步骤：-提供发光二极管芯片（2）和磷光体本体（3），-将牺牲层（4）仅应用到磷光体本体（3）的顶侧（30），-将磷光体本体（3）放置到发光二极管芯片（2）上，-借助于膜辅助模制直接在发光二极管芯片（2）和磷光体本体（3）周围模制封装本体（5），其中在某些地方，牺牲层（4）的背离磷光体本体（3）的顶面（40）保持未被模制膜（61）密封，以及-去除牺牲层（4），使得磷光体本体（3）的顶侧（30）变得不含牺牲层（4）。 |
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在一个实施例中，该方法用于生产光电半导体器件（1），并且包括以下步骤：-提供发光二极管芯片（2）和磷光体本体（3），-将牺牲层（4）仅应用到磷光体本体（3）的顶侧（30），-将磷光体本体（3）放置到发光二极管芯片（2）上，-借助于膜辅助模制直接在发光二极管芯片（2）和磷光体本体（3）周围模制封装本体（5），其中在某些地方，牺牲层（4）的背离磷光体本体（3）的顶面（40）保持未被模制膜（61）密封，以及-去除牺牲层（4），使得磷光体本体（3）的顶侧（30）变得不含牺牲层（4）。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210525&DB=EPODOC&CC=CN&NR=112840469A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210525&DB=EPODOC&CC=CN&NR=112840469A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAN LAY TENG</creatorcontrib><creatorcontrib>LIANG YUAN</creatorcontrib><creatorcontrib>PEE HUI YING</creatorcontrib><creatorcontrib>TEOH HUI CHIANG</creatorcontrib><creatorcontrib>BOON MEI SEE</creatorcontrib><creatorcontrib>LIU TIM</creatorcontrib><creatorcontrib>LIM ALEX KHENG HOOI</creatorcontrib><creatorcontrib>WONG WING YEW</creatorcontrib><creatorcontrib>ALIAS ASLIZA</creatorcontrib><title>METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE</title><description>In one embodiment, a method is used for producing optoelectronic semiconductor devices (1) and comprises the steps of providing a light-emitting diode chip (2) and a phosphor body (3); applying a sacrificial layer (4) to a top side (30) of the phosphor body (3) only; placing the phosphor body (3) onto the light-emitting diode chip (2); molding an encapsulation body (5) directly around the light-emitting diode chip (2) and the phosphor body (3) by means of film assisted molding, wherein at some places, the top face (40) of the sacrificial layer (4) facing away from the phosphor body (3), remains unsealed with a molding film (61); and removing the sacrificial layer (4), so that the top side (30) of the phosphor body (3) becomes free of the sacrificial layer (4).
在一个实施例中，该方法用于生产光电半导体器件（1），并且包括以下步骤：-提供发光二极管芯片（2）和磷光体本体（3），-将牺牲层（4）仅应用到磷光体本体（3）的顶侧（30），-将磷光体本体（3）放置到发光二极管芯片（2）上，-借助于膜辅助模制直接在发光二极管芯片（2）和磷光体本体（3）周围模制封装本体（5），其中在某些地方，牺牲层（4）的背离磷光体本体（3）的顶面（40）保持未被模制膜（61）密封，以及-去除牺牲层（4），使得磷光体本体（3）的顶侧（30）变得不含牺牲层（4）。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj0dQ3x8HdRcPMPUggI8ncJdfb0c1fwDwjxd_VxdQ4J8vfzdFYIdvX1dPb3A0qGAJW5uIZ5OrsGKzj6uRCjkIeBNS0xpziVF0pzMyi6uYY4e-imFuTHpxYXJCan5qWWxDv7GRoaWZgYmJhZOhoTowYACqA0WQ</recordid><startdate>20210525</startdate><enddate>20210525</enddate><creator>TAN LAY TENG</creator><creator>LIANG YUAN</creator><creator>PEE HUI YING</creator><creator>TEOH HUI CHIANG</creator><creator>BOON MEI SEE</creator><creator>LIU TIM</creator><creator>LIM ALEX KHENG HOOI</creator><creator>WONG WING YEW</creator><creator>ALIAS ASLIZA</creator><scope>EVB</scope></search><sort><creationdate>20210525</creationdate><title>METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE</title><author>TAN LAY TENG ; LIANG YUAN ; PEE HUI YING ; TEOH HUI CHIANG ; BOON MEI SEE ; LIU TIM ; LIM ALEX KHENG HOOI ; WONG WING YEW ; ALIAS ASLIZA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN112840469A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAN LAY TENG</creatorcontrib><creatorcontrib>LIANG YUAN</creatorcontrib><creatorcontrib>PEE HUI YING</creatorcontrib><creatorcontrib>TEOH HUI CHIANG</creatorcontrib><creatorcontrib>BOON MEI SEE</creatorcontrib><creatorcontrib>LIU TIM</creatorcontrib><creatorcontrib>LIM ALEX KHENG HOOI</creatorcontrib><creatorcontrib>WONG WING YEW</creatorcontrib><creatorcontrib>ALIAS ASLIZA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAN LAY TENG</au><au>LIANG YUAN</au><au>PEE HUI YING</au><au>TEOH HUI CHIANG</au><au>BOON MEI SEE</au><au>LIU TIM</au><au>LIM ALEX KHENG HOOI</au><au>WONG WING YEW</au><au>ALIAS ASLIZA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE</title><date>2021-05-25</date><risdate>2021</risdate><abstract>In one embodiment, a method is used for producing optoelectronic semiconductor devices (1) and comprises the steps of providing a light-emitting diode chip (2) and a phosphor body (3); applying a sacrificial layer (4) to a top side (30) of the phosphor body (3) only; placing the phosphor body (3) onto the light-emitting diode chip (2); molding an encapsulation body (5) directly around the light-emitting diode chip (2) and the phosphor body (3) by means of film assisted molding, wherein at some places, the top face (40) of the sacrificial layer (4) facing away from the phosphor body (3), remains unsealed with a molding film (61); and removing the sacrificial layer (4), so that the top side (30) of the phosphor body (3) becomes free of the sacrificial layer (4).
在一个实施例中，该方法用于生产光电半导体器件（1），并且包括以下步骤：-提供发光二极管芯片（2）和磷光体本体（3），-将牺牲层（4）仅应用到磷光体本体（3）的顶侧（30），-将磷光体本体（3）放置到发光二极管芯片（2）上，-借助于膜辅助模制直接在发光二极管芯片（2）和磷光体本体（3）周围模制封装本体（5），其中在某些地方，牺牲层（4）的背离磷光体本体（3）的顶面（40）保持未被模制膜（61）密封，以及-去除牺牲层（4），使得磷光体本体（3）的顶侧（30）变得不含牺牲层（4）。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE |
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