Heterojunction power device and manufacturing method thereof

The invention discloses a heterojunction power device and a manufacturing method thereof, and mainly solves the problems of current collapse phenomenon and low breakdown voltage of the existing gallium nitride-based device. The heterojunction power device comprises a substrate (1), a transition laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU XIAOYU, ZHANG JINCHENG, YANG CUI, HAO YUE, MA PEIJUN, DU MING, MAO WEI, WANG HAIYONG, ZHAO SHENGLEI, GAO BEILUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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