Crucible for InP crystal growth and InP crystal growth method

The invention discloses a crucible for InP crystal growth and an InP crystal growth method, the crucible for InP crystal growth comprises a first crucible, a crucible cap and a second crucible; the first crucible is a hollow quartz tube which is formed by a first body part, a first shoulder part and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KE ZUNBIN, WANG QINGWEI, LUO FUMIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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